Journal of Materials Science

, Volume 24, Issue 4, pp 1305–1308 | Cite as

Electron spin resonance and electrical properties of co-evaporated SiO/SnO2 thin films

  • M. H. Islam
  • C. A. Hogarth
  • K. A. Lott


Electron spin resonance (ESR) measurements are reported for various compositions of SiO/SnO2 thin films and indicate a decrease in the value of spin density for increasing SnO2 content in the SiO. Annealing of the device further reduces the value of the spin density. The electrical activation energy and resistivity have been found to increase after annealing of the device and the results are compared with the optical and ESR measurements.


Polymer Thin Film Activation Energy Electron Spin Resonance Electrical Property 


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Copyright information

© Chapman and Hall Ltd. 1989

Authors and Affiliations

  • M. H. Islam
    • 1
  • C. A. Hogarth
    • 1
  • K. A. Lott
    • 1
    • 2
  1. 1.Department of PhysicsBrunel UniversityUxbridgeUK
  2. 2.Department of ChemistryBrunel UniversityUxbridgeUK

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