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Journal of Materials Science

, Volume 25, Issue 2, pp 1069–1075 | Cite as

Morphology and deposition rates of TiB2 prepared by chemical vapour deposition of TiCl4 + B2H6 system

  • Masakazu Mukaida
  • Takashi Goto
  • Toshio Hirai
Papers

Abstract

Titanium diboride (TiB2) deposits were obtained on a graphite substrate by chemical vapour deposition using TiCl4, B2H6 and H2 at deposition temperatures (Tdep) of 1323 to 1773 K and total gas pressures (Ptot) of 4 to 40 kPa. B/Ti molar ratio in the source gases [2B2H6/TiCl4(mB/Ti)] was varied from 0.6 to 4. TiB2 plates were prepared at mB/Ti = 0.6 to 2. The deposition rate increased with increasing Tdep. The largest value of the deposition rate was 1.4 × 10−7 m sec−1 (0.5 mmh−1) at Tdep = 1773 K, Ptot =40 kPa and mB/Ti = 0.6. The activation energies for the formation of CVD−TiB2 plate were 41 to 51 kJ mol−1. These values suggest that the diffusion of gaseous species through the boundary layer is a rate-determining process.

Keywords

Deposition Rate TiCl Deposition Temperature B2H6 Titanium Diboride 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1990

Authors and Affiliations

  • Masakazu Mukaida
    • 1
  • Takashi Goto
    • 1
  • Toshio Hirai
    • 1
  1. 1.Institute for Materials ResearchTohoku UniversitySendaiJapan

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