, Volume 32, Issue 6, pp 15–21 | Cite as

Laser Processing of Materials

  • J. Narayan
Technical Article


Laser beams provide a controlled source of heat by which surface layers of semiconductors and metals can be rapidly melted and cooled with rates exceeding 108C°/s. This rapid melting and solidification has been used to produce unique microstructural modifications and to obtain novel physical properties. This article summarizes the annealing of displacement damage in ion-implanted semiconductors to make superior p-n junctions and solar cells; removal of dislocation loops and precipitates to improve thermally diffused junctions; laser-induced diffusion to form p-n junctions in semiconductors deposited (instead of implanted or thermally diffused) with dopants; and fundamental studies on growth of dislocations, cell formation and alloying.1,2 Other areas — particularly in the field of metals, where laser processing may find wide applications — are covered briefly.


Boron Dislocation Loop Laser Processing Ruby Laser Laser Annealing 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© The Minerals, Metals & Materials Society 1980

Authors and Affiliations

  • J. Narayan
    • 1
  1. 1.Oak Ridge National LaboratoryOak Ridge

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