Laser Processing of Materials
- 10 Downloads
Laser beams provide a controlled source of heat by which surface layers of semiconductors and metals can be rapidly melted and cooled with rates exceeding 108C°/s. This rapid melting and solidification has been used to produce unique microstructural modifications and to obtain novel physical properties. This article summarizes the annealing of displacement damage in ion-implanted semiconductors to make superior p-n junctions and solar cells; removal of dislocation loops and precipitates to improve thermally diffused junctions; laser-induced diffusion to form p-n junctions in semiconductors deposited (instead of implanted or thermally diffused) with dopants; and fundamental studies on growth of dislocations, cell formation and alloying.1,2 Other areas — particularly in the field of metals, where laser processing may find wide applications — are covered briefly.
KeywordsBoron Dislocation Loop Laser Processing Ruby Laser Laser Annealing
Unable to display preview. Download preview PDF.
- 1.J. Narayan, R.T. Young, and C.W. White, “A Comparative Study of Laser and Thermal Annealing of Boron-Implanted Silicon,” J. Appl. Phys. 49(7) (1978), pp. 3912–3917; C.W. White, J. Narayan, and R.T. Young, “Laser Annealing of Ion-Implanted Semiconductors,” Science, 204 (1979) pp. 461–468; J. Narayan, “Laser and Electron Beam Processing of Silicon and Gallium Arsenide,” J. Electrochem. Soc. 80 (1) (1980) pp. 294–332; J. Narayan, C.W. White, and R.T. Young, U.S. Patent, 4, 181, 538, Jan. 1, 1980.CrossRefGoogle Scholar
- 4.J.C. Wang, R.F. Wood, and P.P. Pronko, “Theoretical Analysis of Thermal and Mass Transport in Ion-Implanted, Laser-Annealed Silicon,” Appl. Phys. Lett. 33 (1978), pp. 455–458; R.F. Wood, J.C. Wang, G.E. Giles, and J.R. Kirkpatrick, “Microscopic Theory of Pulsed Laser Annealing,” Laser and Electron Beam Processing of Materials, Academic Press, 1980, to be published.CrossRefGoogle Scholar
- 10.J. Narayan, B.C. Larson and W.H. Christie, “Effect of Thermal Annealing in Boron Implanted, Laser Annealed Silicon,” in Laser-Solid Interaction and Laser Processing, ed. by S.D. Ferris, H.J. Leamy, and J.M. Poate, American Institute of Physics, 50 (1979) pp. 440–445.Google Scholar
- 15.J. Narayan, C.W. White, and B.R. Appleton, “Cell Formation in Ion Implanted, Laser Annealed Silicon,” Bull. Am. Phys. Soc. 25(3) (1980) p. 203.Google Scholar
- 16.J.F. Ready, Industrial Applications of Lasers, Academic Press, New York, 1978.Google Scholar
- 18.B.H. Kear, E.M. Breinan, and E.R. Thomson, “Laser Processing of Materials,” Proc. Sagamore Conference on Recent Advances in Metals Processing, July 1978.Google Scholar
- 19.D.S. Gnanamuthu, C.B. Shaw, Jr., W.E. Lawrence, and M.R. Mitchell, “Laser Transformation Hardening,” in Reference 10, pp. 173–178.Google Scholar
- 23.J. Narayan, C.W. White and R.T. Young, “Laser Annealing in Silicon and Gallium Arsenide,” Rad. Effects (in press).Google Scholar