, Volume 36, Issue 7, pp 57–60 | Cite as

Transition Metal Silicides—Low Resistivity Alternatives for Polysilicon and Metals in Integrated Circuits

  • Shyam P. Murarka
Physical & Mechanical Metallurgy


Transition metal silicides have attracted attention from the beginning of this century. More recently they have found application as low-resistivity metallization in silicon integrated circuits, leading to a major effort in studying the formation and properties of these silicides. In this paper a brief review of the silicide formation, properties, and applicability in the integrated circuits has been presented.


Polysilicon SiH4 Transmission Electron Microscopic Cross Section Junction Depth Silicide Formation 
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  1. 1.
    A.K. Sinha, J. A. Cooper, Jr., and H. J. Levinstein, IEEE Elec. Dev. Lett. EDL-3, (1982), p. 90.CrossRefGoogle Scholar
  2. 2.
    S. P. Murarka, J. Vac. Sci. Techn. 17, (1980), p. 775.CrossRefGoogle Scholar
  3. 3.
    Y. Nakayama, K. Suyama, H. Shimizu, N. Yokoyama, A. Shibatomi, and H. Ishikawa, in IEEE-ISSCC-1983, Digest of Techn. Papers, IEEE, N.Y. (1982), p. 48.Google Scholar
  4. 4.
    W. S. Tseng and A. Christou, in “IEEE-IEDM 1982, Technical Digest,” IEEE, N.Y. (1982), p. 174.Google Scholar
  5. 5.
    N. Yokoyama, T. Ohnishi, K. Odani, H. Onodera, and M. Abe, Trans. Electron Dev. ED-29, (1982), p. 1541.CrossRefGoogle Scholar
  6. 6.
    K. Suyama, H. Shimizu, S. Yokogawa, Y. Nakayama, and A. Shibatomi, Jap. J. Appl. Phys., 22, Supplement 21-1, (1983), p. 341.Google Scholar
  7. 7.
    S. P. Murarka, Silicides for VLSI Applications, Academic Press, N.Y. (1983).Google Scholar
  8. 8.
    G. Ottaviani, J. Vac. Sci. Techn. 116, (1979), p. 1112.CrossRefGoogle Scholar
  9. 9.
    S. P. Murarka, M. H. Read, C. J. Doherty, and D. B. Fraser, J. Electrochem. Soc. 129, (1982), p.293.CrossRefGoogle Scholar
  10. 10.
    R. M. Walser and R. W. Bené, Appl. Phys. Lett. 28, (1976), p. 624.CrossRefGoogle Scholar
  11. 11.
    B. Y. Tsaur, S. S. Lau, J. W. Mayer, and M-A. Nicolet, Appl. Phys. Lett. 38, (1981), p. 922.CrossRefGoogle Scholar
  12. 12.
    M P. Lepselter and J. M. Andrews, in Ohmic Contacts to Semiconductors, edited by B. Schwartz, The Electrochemical Soc., Princeton, N.J. 1969, p. 159.Google Scholar
  13. 13.
    D. B. Fraser and S. P. Murarka, U.S. Patent No. 4,337,476 (1982).Google Scholar
  14. 14.
    A. K. Shinha, R. B. Marcus, T. T. Sheng, and S. E. Hazko, J. Appl. Phys. 43, (1972), p. 3637.CrossRefGoogle Scholar
  15. 15.
    S. P. Murarka, E. Kinsbron, D. B. Fraser, J. M. Andrews, and E. J. Lloyd, J. Appl. Phys. 54, (1983), p. 6943.CrossRefGoogle Scholar

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© The Minerals, Metals & Materials Society 1984

Authors and Affiliations

  • Shyam P. Murarka

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