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Transition Metal Silicides—Low Resistivity Alternatives for Polysilicon and Metals in Integrated Circuits

  • Physical & Mechanical Metallurgy
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Summary

Transition metal silicides have attracted attention from the beginning of this century. More recently they have found application as low-resistivity metallization in silicon integrated circuits, leading to a major effort in studying the formation and properties of these silicides. In this paper a brief review of the silicide formation, properties, and applicability in the integrated circuits has been presented.

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Authors
  1. Shyam P. Murarka
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Murarka, S.P. Transition Metal Silicides—Low Resistivity Alternatives for Polysilicon and Metals in Integrated Circuits. JOM 36, 57–60 (1984). https://doi.org/10.1007/BF03338505

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  • DOI: https://doi.org/10.1007/BF03338505

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