Transition Metal Silicides—Low Resistivity Alternatives for Polysilicon and Metals in Integrated Circuits
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Transition metal silicides have attracted attention from the beginning of this century. More recently they have found application as low-resistivity metallization in silicon integrated circuits, leading to a major effort in studying the formation and properties of these silicides. In this paper a brief review of the silicide formation, properties, and applicability in the integrated circuits has been presented.
KeywordsPolysilicon SiH4 Transmission Electron Microscopic Cross Section Junction Depth Silicide Formation
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