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Epitaxial GaAs on Si

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References

  1. T. Nonaka, M. Akiyama, Y. Kawarada and K. Kaminishi, J. Appi. Phys., 23 (1984), L 919.

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  2. H. Shichijo, J.W. Lee, W.V. McLevige and A.H. Taddiken, Proceed. 1986 Int. Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser., 83 (1987), p. 489.

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  3. H.K. Choi, G.W. Turner, T.H. Windhorn and B-Y. Tsaur, IEEE Electron Device Lett, Edl-7 (1986), p. 500.

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Authors and Affiliations

  1. Texas Instruments Inc., USA

    Don W. Shaw

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  1. Don W. Shaw
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Editor’s Note: The following is based on a presentation made during the Silicon Technology Symposium during the Materials Research Society (MRS) Meeting during April in Anaheim, California. The complete paper will be published in the 91st volume of the MRS proceedings series.

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Shaw, D.W. Epitaxial GaAs on Si. JOM 39, 13 (1987). https://doi.org/10.1007/BF03258053

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