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JOM

, Volume 45, Issue 2, pp 55–60 | Cite as

Materials issues in strained solid-phase epitaxial growth of Si1−xGex

  • David C. Paine
Electronic Material Overview

Abstract

Recent advances in modern microelectronics materials technology have depended on the creation of a heterojunction between electronically dissimilar materials (i.e., different band gap) that have like crystal structures but different lattice parameters. With the advent of Si1−xGex-on-silicon heterojunction technology, a host of new and interesting materials issues must be resolved. These challenges require improved understanding of amorphous/crystalline interface morphological stability during strained solid-phase heteroepitaxial regrowth, the mechanisms of defect introduction, and the kinetics of the amorphous-to-crystalline transformation. All of these processes are directly affected by the level of misfit strain energy in the system during the transformation.

Keywords

Critical Thickness Alloy Layer Pure Silicon Solid Phase Epitaxy Epitaxial Regrowth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© TMS 1993

Authors and Affiliations

  • David C. Paine
    • 1
  1. 1.Brown UniversityUSA

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