Abstract
Diamond growth at room temperature [i.e., on unheated monocrystalline silicon (111) substrates], has been demonstrated by the laser irradiation of CO/H2 gas mixtures at low pressures. The CO is photodissociated by a multiphoton process using 193 nm radiation from an excimer laser. This process, referred to as laser chemical vapor deposition (LCVD), is distinct from the laser-excited CVD (LECVD) process described in an earlier publication. Although no quantitative measurements have yet been made on the gas-phase species compositions in LCVD, the growth of diamond particles at room temperature marks a beginning to enabling diamond deposition on materials with low melting temperatures.
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Rebello, J.H.D., Subramanian, V.V. Diamond synthesis at low temperatures. JOM 46, 60–63 (1994). https://doi.org/10.1007/BF03220752
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DOI: https://doi.org/10.1007/BF03220752