Macromolecular Research

, Volume 17, Issue 6, pp 436–440 | Cite as

Effect of curing conditions of a poly(4-vinylphenol)gate dielectric on the performance of a pentacene-based thin film transistor

  • Minkyu Hwang
  • Hwa Sung Lee
  • Yunseok Jang
  • Jeong Ho Cho
  • Shichoon Lee
  • Do Hwan Kim
  • Kilwon Cho


We improved the performance of pentacene-based thin film transistors by changing the curing environment of poly(4-vinylphenol) (PVP) gate dielectrics, while keeping the dielectric constant the same. The field-effect mobility of the pentacene TFTs constructed using the vacuum cured PVP was higher than that of the device based on the Ar flow cured gate dielectric, possibly due to the higher crystalline perfection of the pentacene films. The present results demonstrated that the curing conditions used can markedly affect the surface energy of polymer gate dielectrics, thereby affecting the field-effect mobility of TFTs based on those dielectrics.


poly(4-vinylphenol) pentacene transistor OTFTs surface energy 


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Copyright information

© The Polymer Society of Korea and Springer 2009

Authors and Affiliations

  • Minkyu Hwang
    • 1
  • Hwa Sung Lee
    • 1
  • Yunseok Jang
    • 1
  • Jeong Ho Cho
    • 1
  • Shichoon Lee
    • 1
  • Do Hwan Kim
    • 1
  • Kilwon Cho
    • 1
  1. 1.Department of Chemical Engineering / Polymer Research InstitutePohang University of Science and TechnologyPohangKorea

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