Il Nuovo Cimento D

, Volume 20, Issue 7–8, pp 923–930 | Cite as

Dependence of phonon linewidths in semiconductors on temperature and isotopic composition

  • A. Debernardi
  • M. Cardona


In this work we present calculations of the Raman linewidth in 3C–SiC with different isotopic compositions which present non-trivial trends. Our results are discussed for both longitudinal and transverse modes. The temperature dependence of the linewidth of natural SiC is computed and compared with available experimental data.

PACS 63.20

Phonons in crystal lattices 

PACS 63.20.Ry

Anharmonic lattice modes 

PACS 31.15Ar

Ab initio calculations 

PACS 31.15.Ew

Density-functional theory 

PACS 01.30.Ee

Monographs and collections 


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Copyright information

© Società Italiana di Fisica 1998

Authors and Affiliations

  • A. Debernardi
    • 1
  • M. Cardona
    • 1
  1. 1.Max -Planck- Institut für FestkörperforschungStuttgartGermany

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