Chinese Science Bulletin

, Volume 47, Issue 19, pp 1601–1603 | Cite as

SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers

  • Guanghua Yu
  • Jidong Ma
  • Fengwu Zhu
  • Chunlin Chai


Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an “intermixing layer” at the SiO2/Ta interface due to a thermodynamically favorable reaction: 15 SiO2 + 37 Ta = 6 Ta2O5 + 5 Ta5Si5. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.


SiO2Ta interface interface reaction X-ray photoelectron spectroscopy (XPS) 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Hwang, D. G., Park, C. M., Lee, S. S., Exchange biasing in NiO spin valves, J. Magn. Magn. Mater., 1998, 186: 265.CrossRefGoogle Scholar
  2. 2.
    Schulthess, T. C., Butler, W. H., Consequences of spin-flop coupling in exchange biased films, Phys. Rev. Lett., 1998, 81: 4516.CrossRefGoogle Scholar
  3. 3.
    Antel, W. J., Jr., Perjeru, F., Harp, G. R., Spin structure at the interface of exchange biased FeMn/Co bilayers, Phys. Rev. Lett., 1999, 83: 1439.CrossRefGoogle Scholar
  4. 4.
    Bruckner, W., Baunack, S., Hecker, M. et al., Interdiffusion in NiFe/Cu/NiFe trilayer: possible failure mechanism for magneto-electronic devices, Appl. Phys. Lett., 2000, 77: 358.CrossRefGoogle Scholar
  5. 5.
    Thirle, J-U., Pocker, D. J., White, R. L., Interface reactions between quaternary cobalt alloys and carbon coating in thin film disk media, J. Appl. Phys., 2000, 87: 2989.CrossRefGoogle Scholar
  6. 6.
    Yu, G. H., Chai, C. L., Zhao, H. C. et al., Interface reaction of Ta/NiO and its effect on exchange coupling, J. Magn. Magn. Mater., 2001, 224: 61.CrossRefGoogle Scholar
  7. 7.
    Yu, G. H., Chai, C. L., Zhu, F. W. et al., Interface reaction of NiO/NiFe and its influence on magnetic properties, Appl. Phys. Lett., 2001, 78: 1706.CrossRefGoogle Scholar
  8. 8.
    Nishioka, K., Gangopadhyay, S., Fujiwara, H. et al., Hysteresis and interaction between the magnetic layers in spin valves, IEEE. Trans. Magn., 1995, 31: 3949.CrossRefGoogle Scholar
  9. 9.
    Lenssen, K-M. H., Kools, J. C. S., De Veirman, A. E. M. et al., MBE-grown spin valves, J. Magn. Magn. Mater., 1996, 156: 63.CrossRefGoogle Scholar
  10. 10.
    Yu, G. H., Chai, C. L., Zhu, F. W. et al., Magnetic property and interface structure of Ta/NiO/NiFe/Ta, Chinese Science Bulletin, 2001, 46(5): 438.CrossRefGoogle Scholar
  11. 11.
    Sharma, M., Wang, S. X., Nickel, J. H., Determination of barrier oxidation states in spin dependent tunneling structures, J. Appl. Phys., 1999, 85: 7803.CrossRefGoogle Scholar
  12. 12.
    Atanassova, E., Dimitrova, T., Koprinarova, J., AES and XPS study of thin RF-sputtered Ta2O5 layers, Applied Surface Science, 1995, 84: 193.CrossRefGoogle Scholar
  13. 13.
    Tanuma, S., Powell, C. J., Penn, D. R., Calculations of electron inelastic mean free paths for 31 materials, Surface and Interface Analysis, 1988, 11: 577.CrossRefGoogle Scholar
  14. 14.
    Wagner, C. D., Riggs, W. M., Davis, L. E. et al., Handbook of X-ray Photoelectron Spectroscopy, Minnesota: Perkin-Elmer, U.S.A., 1979, 52 and 144.Google Scholar
  15. 15.
    Massalshi, T. B., Murray, J. L., Bennett, L. H. et al., Binary Alloy Phase Diagrams, American Society for Metals, U.S.A., 1986, 2052.Google Scholar
  16. 16.
    SGTE(Scientific Group Thermodata Europe), Solution Data-base, 1992.Google Scholar
  17. 17.
    Kools, J. C. S., Effect of energetic particle bombardment during sputter deposition on the properties of exchange-biased spin-valve multilayers, J. Appl. Phys., 1995, 77: 2993.CrossRefGoogle Scholar
  18. 18.
    Huang, T. C., Nozieres, J-P., Speriousu, V. S. et al., Effect of annealing on the interfaces of giant-magnetoresistance spin-valve structures, Appl. Phys. Lett., 1993, 62: 1478.CrossRefGoogle Scholar

Copyright information

© Science in China Press 2002

Authors and Affiliations

  • Guanghua Yu
    • 1
  • Jidong Ma
    • 1
  • Fengwu Zhu
    • 1
  • Chunlin Chai
    • 2
  1. 1.Department of Materials PhysicsUniversity of Science and TechnologyBeijingChina
  2. 2.Institute of SemiconductorChinese Academy of SciencesBeijingChina

Personalised recommendations