SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers
Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an “intermixing layer” at the SiO2/Ta interface due to a thermodynamically favorable reaction: 15 SiO2 + 37 Ta = 6 Ta2O5 + 5 Ta5Si5. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.
KeywordsSiO2Ta interface interface reaction X-ray photoelectron spectroscopy (XPS)
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