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Modeling of creation silicon ion clusters in a silane plasma

  • A. F. Stekolnikov
  • D. V. Feschenko
  • P. G. Makshov
  • A. G. Galkevich
Low Temperature Plasma
  • 22 Downloads

Abstract

New gas-phase model of silane decomposition during plasma enhanced chemical vapor deposition with formation of stable negative hydrogenated silicon ion clusters is suggested. The kinetics equations describing time dependent cluster formation are computed.

PACS

52.77.Dq 52.25.Dg 

Key words

decomposition kinetics equations ion clusters 

References

  1. [1]
    C. Hollenstein et al.: J. Phys. D31 (1998) 74.CrossRefADSGoogle Scholar
  2. [2]
    A. F. Stekolnikov, D. V. Feshchenko et al.: Proc. XV ESCAMPIG, Lillafured, Miskolc, Hungary, 2000.Google Scholar
  3. [3]
    A. F. Stekolnikov, D. V. Feshchenko, et al.: Proc. XV International Symposium on Plasma Chemistry, Orlean, France, 2001.Google Scholar

Copyright information

© Springer 2004

Authors and Affiliations

  • A. F. Stekolnikov
    • 1
  • D. V. Feschenko
    • 1
  • P. G. Makshov
    • 1
  • A. G. Galkevich
    • 1
  1. 1.Belarus State University of Informatics and RadioelectronicsMinskBelarus

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