Applied Magnetic Resonance

, Volume 13, Issue 1–2, pp 55–73 | Cite as

Muonium as an experimental model of hydrogen point defects in semiconductors

  • K. H. Chow


Hydrogen is an important defect in semiconductors which can significantly alter the electrical and optical properties of the host. Information on isolated interstitial hydrogen is virtually nonexistent. Fortunately, complementary data can be obtained by studying muonium. In this article, we describe recent experimental examples which illustrate how μSR can be used to investigate the electronic structure and dynamics of muonium in semiconductors and discuss the relevance of these measurements for isolated hydrogen.


GaAs GaSb Magnetic Field Dependence Site Change Senba 
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Copyright information

© Springer 1997

Authors and Affiliations

  • K. H. Chow
    • 1
  1. 1.Department of PhysicsLehigh UniversityBethlehemUSA

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