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Applied Magnetic Resonance

, Volume 13, Issue 1–2, pp 55–73 | Cite as

Muonium as an experimental model of hydrogen point defects in semiconductors

  • K. H. Chow
Article
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Abstract

Hydrogen is an important defect in semiconductors which can significantly alter the electrical and optical properties of the host. Information on isolated interstitial hydrogen is virtually nonexistent. Fortunately, complementary data can be obtained by studying muonium. In this article, we describe recent experimental examples which illustrate how μSR can be used to investigate the electronic structure and dynamics of muonium in semiconductors and discuss the relevance of these measurements for isolated hydrogen.

Keywords

GaAs GaSb Magnetic Field Dependence Site Change Senba 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Myers S.M., Baskes M.I., Birnbaum H.K., Corbett J.W., DeLeo G.G., Estreicher S.K., Haller E.E., Jena P., Johnson N.M., Kirchheim R., Pearton S.J., Stavola M.J.: Rev. Mod. Phys.64, 559 (1992)CrossRefADSGoogle Scholar
  2. [2]
    Pankove J.I., Johnson N.M.: Hydrogen in Semiconductors, vol. 34. New York: Academic Press 1991.Google Scholar
  3. [3]
    Pearton J., Corbett W., Stavola M.: Hydrogen in Crystalline Semiconductors. Heidelberg: Springer 1992.Google Scholar
  4. [4]
    Roduner E.: Appl. Magn. Reson.13, 1 (1997)CrossRefGoogle Scholar
  5. [5]
    Gorelkinskii Yu.V., Nevinnyi N.N.: Sov. Tech. Phys. Lett.13, 45 (1987); Gorelkinskii Yu.V., Nevinnyi N.N.: Physica B170, 155 (1991)Google Scholar
  6. [6]
    Bech Nielsen B., Bonde Nielsen K., Byberg J.R.: Materials Science Forum143–147, 909 (1994)CrossRefGoogle Scholar
  7. [7]
    Patterson B.D.: Rev. Mod. Phys.60, 69 (1988)CrossRefADSGoogle Scholar
  8. [8]
    Kiefl R.F., Estle T.L. in: Hydrogen in Semiconductors (Pankove J.I., Johnson N.M., eds.), vol. 34. New York: Academic Press 1991.Google Scholar
  9. [9]
    Chow K.H., Hitti B., Kiefl R.F. in: Identification of Defects in Semiconductors (Stavola M., ed.), New York: Academic Press (in press)Google Scholar
  10. [10]
    Van de Walle C.G. in: Hydrogen in Semiconductors (Pankove J.I., Johnson N.M., eds.), vol. 34. New York: Academic Press 1991.Google Scholar
  11. [11]
    Deák P., Snyder L.C., Corbett J.W.: Phys. Rev. B.43, 4545 (1991)CrossRefADSGoogle Scholar
  12. [12]
    Kiefl R.F., Schneider J.W., Keller H., Kündig W., Odermatt W., Patterson B.D., Blazey K.W., Estle T.L., Rudaz S.L.: Phys. Rev. B32, 530 (1985)CrossRefADSGoogle Scholar
  13. [13]
    Kiefl R.F., Celio M., Estle T.L., Kreitzman S.R., Luke G.M., Riseman T.M., Ansaldo E.J.: Phys. Rev. Lett.60, 224 (1988)CrossRefADSGoogle Scholar
  14. [14]
    Kiefl R.F., Celio M., Estle T.L., Luke G.M., Kreitzman S.R., Brewer J.H., Noakes D.R., Ansaldo E.J., Nishiyama K.: Phys. Rev. Lett.58, 1780 (1987)CrossRefADSGoogle Scholar
  15. [15]
    Schneider J.W., Chow K., Kiefl R., Kreitzman S.R., MacFarlane A., DuVarney R., Estle T.L., Lichti R.L., Schwab C.: Phys. Rev. B47, 10193 (1993)CrossRefADSGoogle Scholar
  16. [16]
    Kadono R., Kiefl R.F., Brewer J.H., Luke G.M., Pfiz T., Riseman T.M., Sternlib B.J.: Hyp. Int.64, 635 (1990)CrossRefADSGoogle Scholar
  17. [17]
    Kadono R., Matsushita A., Nagamine K., Nishiyama K., Chow K.H., Kiefl R.K., MacFarlane A., Schumann D., Fujii S., Tanigawa S.: Phys. Rev. B50, 1999 (1994)CrossRefADSGoogle Scholar
  18. [18]
    Schneider J.W., Kiefl R.F., Ansaldo E.J., Brewer J.H., Chow K., Cox S.F.J., Dodds S.A., Duvarney R.C., Estle T.L., Haller E.E., Kadono R., Kreitzman S.R., Lichti R.L., Niedermayer Ch., Pfiz T., Riseman T.M., Schwab C.: Materials Science Forum83–87, 569 (1992)CrossRefGoogle Scholar
  19. [19]
    Morrow R.A.: J. Appl. Phys.74, 6174 (1993)CrossRefADSGoogle Scholar
  20. [20]
    Hartmann O.: Phys. Rev. Lett.39, 832 (1977)CrossRefADSGoogle Scholar
  21. [21]
    Chow K.H., Kiefl R.F., MacFarlane W.A., Schneider J.W., Cooke D.W., Leon M., Paciotti M., Estle T.L., Hitti B., Lichti R.L., Cox S.F.J., Schwab C., Davis E.A., Morrobel-Sosa A., Zavieh L.: Phys. Rev. B51, 14762 (1995)CrossRefADSGoogle Scholar
  22. [22]
    Deleo G.G., Fowler W.B. in: Hydrogen in Semiconductors (Pankove J.I., Johnson N.M., eds.), vol. 34. New York: Academic Press 1991.Google Scholar
  23. [23]
    Hayano R.S., Uemura Y.J., Imazato J., Nishida N., Yamazaki T., Kubo R.: Phys. Rev. B20, 850 (1979)CrossRefADSGoogle Scholar
  24. [24]
    Chow K.H., Hitti B., Kiefl R.F., Dunsiger S.R., Lichti R.L., Estle T.L.: Phys. Rev. Lett.76, 3790 (1996)CrossRefADSGoogle Scholar
  25. [25]
    Celio M: Helv. Phys. Acta60, 600 (1987); Yen H.K.: M. Sc. Thesis, University of British Columbia 1988.Google Scholar
  26. [26]
    Lichti R.L., Cox S.F.J., Schwab C., Estle T.L., Hitti B., Chow K.H.: Hyp. Int. (in press)Google Scholar
  27. [27]
    Senba M: J. Phys. B23, 4051 (1990)CrossRefADSGoogle Scholar
  28. [28]
    Nosov V.G., Yakovleva I.V.: Sov. Phys. JETP16, 1236 (1963)ADSGoogle Scholar
  29. [29]
    Ivanter I.G., Smilga V.P.: Sov. Phys. JETP33, 1070 (1971)ADSGoogle Scholar
  30. [30]
    Odermatt W., Helv. Phys. Acta61, 1087 (1988)Google Scholar
  31. [31]
    Senba M: J. Phys. B23, 1545 (1990)CrossRefADSGoogle Scholar
  32. [32]
    Senba M: J. Phys. B24, 3531 (1991)CrossRefADSGoogle Scholar
  33. [33]
    Chow K.H., Kiefl R.K., Schneider J.W., Hitti B., Estle T.L., Lichti R.L., Schwab C., DuVarney R.C., Kreitzman S.R., MacFarlane W.A., Senba M.: Phys. Rev. B47, 16004 (1993)CrossRefADSGoogle Scholar
  34. [34]
    Kreitzman S.R., Hitti B., Lichti R.L., Estle T.L., Chow K.H.: Phys. Rev. B51, 13117 (1995)CrossRefADSGoogle Scholar
  35. [35]
    Buda F., Chiarotti G.L., Car R., Parrinello M.: Phys. Rev. Lett.63, 294 (1989)CrossRefADSGoogle Scholar
  36. [36]
    Chow K.H., Lichti R.L., Kiefl R.F., Dunsiger S., Estle T.L., Hitti B., Kadono R., MacFarlane W.A., Schneider J.W., Schumann D., Shelley M.: Phys. Rev. B50, 8918 (1994)CrossRefADSGoogle Scholar
  37. [37]
    Chow K.H., Kiefl R.F., Schneider J.W., Estle T.L., Hitti B., Lichti R.L., Schwab C., Kreitzman S.R., DuVarney R.C., Senba M., Sonier J., Johnston T.M.S., MacFarlane W.A.: Hyp. Int.86, 693 (1994)CrossRefADSGoogle Scholar
  38. [38]
    Estle T.L., Lichti R.L.: Hyp. Int.97–98, 171 (1996)CrossRefGoogle Scholar
  39. [39]
    Westhauser E., Albert E., Hamma M., Recknagel E., Weidinger A., Moser P.: Hyp. Int.32, 589 (1986)CrossRefADSGoogle Scholar
  40. [40]
    Kadono R., Matsushita A., Macrae R.M., Nishiyama K., Nagamine K.: Phys. Rev. Lett.73, 2724 (1994)CrossRefADSGoogle Scholar
  41. [41]
    Odermatt W., Baumeler Hp., Keller H., Kündig W., Patterson B.D., Schneider J.W., Sellschop J.P.F., Stemmet M.C., Connell S., Spencer D.P.: Phys. Rev. B38, 4388 (1988)CrossRefADSGoogle Scholar
  42. [42]
    Scheuermann R., Schimmele L., Seeger A., Stammler Th., Grund Th., Hampele M., Herlach D., Iwanowski M., Major J., Notter M., Pfiz Th.: Phil. Mag. B72, 161 (1995)Google Scholar

Copyright information

© Springer 1997

Authors and Affiliations

  • K. H. Chow
    • 1
  1. 1.Department of PhysicsLehigh UniversityBethlehemUSA

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