Advertisement

Donor-Gallium vacancy complex in GaP

  • P. Krispin
Article
  • 10 Downloads

Abstract

Using a thermochemical model for the formation and incorporation of various defects in GaP the behaviour of an electron trap is explained. It can be concluded that the deep level probably comes from a complex involving a donor element and a gallium vacancy.

Keywords

GaAs Electron Trap Antisite Defect Trap Concentration Vacancy Complex 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    SeeD. V. Lang, Topics in Appl. Phys. (Ed. Bräunlich),37, 93, 1979.Google Scholar
  2. 2.
    P. Krispin andJ. Maege, phys. stat. sol. (a),47, 91, 1978.CrossRefGoogle Scholar
  3. 3.
    P. Krispin, phys. stat. sol. (a),56, K15, 1979.CrossRefGoogle Scholar
  4. 4.
    J. A. Van Vechten, Czech. J. Phys., B30, 388, 1980.CrossRefADSGoogle Scholar
  5. 5.
    D. T. J. Hurle, J. Phys. Chem. Solids,40, 627, 1979.CrossRefADSGoogle Scholar
  6. 6.
    J. A. Van Vechten, J. Electronic Materials,4, 1159, 1975.CrossRefADSGoogle Scholar
  7. 7.
    J. M. Dishman, D. F. Daly andW. P. Knox, J. Appl. Phys.,43, 4693, 1972.CrossRefADSGoogle Scholar
  8. 8.
    P. J. Dean, J. Luminescence,7, 51, 1973.CrossRefADSGoogle Scholar
  9. 9.
    S. Metz andW. Fritz, Inst. Phys. London, Conf. Series,33a, 66, 1977.Google Scholar
  10. 10.
    D. T. J. Hurle, J. Phys. Chem. Solids,40, 613, 1979.CrossRefADSGoogle Scholar
  11. 11.
    A. E. Widmer andR. Fehlmann, Solid-State Electronics,14, 423, 1971.CrossRefADSGoogle Scholar
  12. 12.
    E. Fabre, R. N. Bhargava andW. K. Zwicker, J. Electronic Materials,3, 409, 1974.CrossRefADSGoogle Scholar
  13. 13.
    A. S. Jordan, R. Caruso, A. R. Von Neida andM. E. Weiner, J. Appl. Phys.,45, 3472, 1974.CrossRefADSGoogle Scholar
  14. 14.
    J. A. Van Vechten, J. Electrochem. Soc.,122, 423, 1975.CrossRefGoogle Scholar
  15. 15.
    W. Heinke andH. J. Queisser, Phys. Rev. Letters,33, 1082, 1974.CrossRefADSGoogle Scholar
  16. 16.
    P. W. Hutchinson, P. S. Dobson, B. Wakefield andS. O’Hara, Solid-State Electronics,21, 1413, 1978.CrossRefADSGoogle Scholar
  17. 17.
    J. B. Mullin, A. Royle andS. Benn, J. Crystal Growth,50, 625, 1980.CrossRefADSGoogle Scholar

Copyright information

© with the authors 1981

Authors and Affiliations

  • P. Krispin
    • 1
  1. 1.Central Institute of Electron PhysicsAcademy of Sciences of the GDRBerlinGDR

Personalised recommendations