Donor-Gallium vacancy complex in GaP

  • P. Krispin


Using a thermochemical model for the formation and incorporation of various defects in GaP the behaviour of an electron trap is explained. It can be concluded that the deep level probably comes from a complex involving a donor element and a gallium vacancy.


GaAs Electron Trap Antisite Defect Trap Concentration Vacancy Complex 
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Copyright information

© with the authors 1981

Authors and Affiliations

  • P. Krispin
    • 1
  1. 1.Central Institute of Electron PhysicsAcademy of Sciences of the GDRBerlinGDR

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