Abstract
Using a thermochemical model for the formation and incorporation of various defects in GaP the behaviour of an electron trap is explained. It can be concluded that the deep level probably comes from a complex involving a donor element and a gallium vacancy.
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Krispin, P. Donor-Gallium vacancy complex in GaP. Acta Physica 51, 441–448 (1981). https://doi.org/10.1007/BF03159682
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DOI: https://doi.org/10.1007/BF03159682