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Acta Physica Hungarica

, Volume 54, Issue 1–2, pp 125–137 | Cite as

Magnetoresistance and electron scattering mechanisms in gallium arsenide

  • B. Pődör
Condensed Matter
  • 11 Downloads

Abstract

Results of magnetoresistance measurements performed at 300K and 77K on GaAs single crystals having electron concentrations in the range of 1016 to 1018 cm−3 were analysed using the concept of effective relaxation time τeff∼ε r eff wherer eff is the effective scattering exponent. The values ofr eff deduced from the experiments are in accordance with dominant polar optical phonon and space-charge scattering at room temperature as well as with dominant ionized impurity scattering with an admixture of space-charge scattering at liquid nitrogen temperature. Results for the Hall factor at these two temperatures are also presented; at 300Kr H ≈1, but at 77K it changes appreciably with the carrier concentration.

Keywords

GaAs Electron Concentration Gallium Arsenide Scattering Mechanism Polar Optical Phonon 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© with the authors 1983

Authors and Affiliations

  • B. Pődör
    • 1
  1. 1.Research Laboratory for Inorganic Chemistry of the Hungarian Academy of SciencesBudapestHungary

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