Kinetic model for vacancy transport caused by moving dislocations in ionic crystals
- 12 Downloads
A simplified kinetic model for the calculation of vacancy transport caused by moving dislocations is developed. The basic principle of the model is that the transport process is carried out by the diffusion of vacancies in the potential field of the moving dislocations. The numerical results obtained in ionic crystals agree well with the experimental results at room temperature, but at higher temperatures there is significant discrepancy between the theory and experiment. The estimations show that this discrepancy can be attributed to the unjustified neglects made during the evaluation of the measurements.
KeywordsVacancy Concentration Ionic Crystal Dislocation Velocity Atomic Jump Experimentat Room Temperature
Unable to display preview. Download preview PDF.
- 1.A. H. Cottrell, Dislocations and Plastic Flow in Crystals, Oxford, 1953.Google Scholar
- 5.V. I. Alshits, M. V. Galustashvili andI. M. Paperno, Kristallografiya,20, 1113, 1975.Google Scholar
- 9.A. B. Lidiard, Handbuch der Physik, Vol.20, Springer-Verlag, Berlin 1957.Google Scholar
- 14.H. Haven, Recueil Trav. Chim.,69, 1471, 1950.Google Scholar
- 15.T. G. Stoebe andP. L. Pratt, Proc. Brit. Ceram. Soc.,9, 181, 1967.Google Scholar
- 16.R. G. Fuller, Point Defects in Solids, Vol.1, Plenum Press, New York, 1972.Google Scholar
- 17.A. Tóth andJ. Sárközi, J. de Physique,C7, 604, 1976.Google Scholar