Optical excitation of electrons bound to shallow donors in GaP

  • B. Bődör
  • Z. Laczkó
Condensed Matter


Infrared transmission measurements of GaP with S, Te and Si donor impurities revealed absorption lines due to the excitation of electrons bound to lower lying ls like states to higher lying p like states. 1s→2p± transitions were observed for S, Te and Si donors as well as transitions to other p0 and p± states. Optical ionization energies of S, Te and Si were determined as 891 ±5 cm−1, 776 ± 5 cm−1 and 713 ± 5 cm−1, respectively, using the effective mass approximation.


Absorption Line Shallow Donor Infrared Transmission Effective Mass Approximation Infrared Transmission Spectrum 


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Copyright information

© with the authors 1979

Authors and Affiliations

  • B. Bődör
    • 1
  • Z. Laczkó
    • 1
  1. 1.Research Laboratory for Inorganic Chemistry of the Hungarian Academy of SciencesBudapestHungary

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