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Optical excitation of electrons bound to shallow donors in GaP

  • Condensed Matter
  • Published:
Acta Physica Academiae Scientiarum Hungaricae

Abstract

Infrared transmission measurements of GaP with S, Te and Si donor impurities revealed absorption lines due to the excitation of electrons bound to lower lying ls like states to higher lying p like states. 1s→2p± transitions were observed for S, Te and Si donors as well as transitions to other p0 and p± states. Optical ionization energies of S, Te and Si were determined as 891 ±5 cm−1, 776 ± 5 cm−1 and 713 ± 5 cm−1, respectively, using the effective mass approximation.

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Authors and Affiliations

  1. Research Laboratory for Inorganic Chemistry of the Hungarian Academy of Sciences, Budapest, Hungary

    B. Bődör & Z. Laczkó

Authors
  1. B. Bődör
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  2. Z. Laczkó
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Bődör, B., Laczkó, Z. Optical excitation of electrons bound to shallow donors in GaP. Acta Physica 47, 69–74 (1979). https://doi.org/10.1007/BF03156511

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  • DOI: https://doi.org/10.1007/BF03156511

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