Single crystal growth and characterization of indium and nitrogen doped GaAs
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The isovalent doping of GaAs single crystals prepared by Horizontal Bridgman method is examined. Attention is given to the influence of In and N doping on the crystal growth and electrical parameters of GaAs single crystals. It was found that In and N doping does not alter the electrical properties of GaAs crystals. The critical value of indium concentration in the melt was determined to be about 1×1021 cm−3 in the case of GaAs: In crystal growth.
KeywordsGaAs Crystal Growth Indium Concentration Single Crystal Growth GaAs Crystal
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- 1.A. S. Jordan, R. Caruso, A. R. Von Neida, Bell Syst. Tech. J.,59, 593, 1980.Google Scholar