Resistivity measurements in silicon inversion layers
In this paper a simple method is presented for resistivity measurements on silicon inversion layers. The classical Van der Pauw method is applicable only if the thickness of the sample is a given value. In MOSFET structures the layer depth is the function of the gate voltage. We evaluated the inversion layer thickness from the DC drain current-gate voltage characteristic by using the delta depletion theory. After this the Van der Pauw method can be used.
KeywordsSheet Resistance Gate Voltage Layer Depth Inversion Layer Resistivity Tensor
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