Acta Physica Hungarica

, 62:15 | Cite as

Resistivity measurements in silicon inversion layers

  • G. Gombos
  • M. M. Mostafa
  • H. Al-Sharaby
Condensed Matter


In this paper a simple method is presented for resistivity measurements on silicon inversion layers. The classical Van der Pauw method is applicable only if the thickness of the sample is a given value. In MOSFET structures the layer depth is the function of the gate voltage. We evaluated the inversion layer thickness from the DC drain current-gate voltage characteristic by using the delta depletion theory. After this the Van der Pauw method can be used.


Sheet Resistance Gate Voltage Layer Depth Inversion Layer Resistivity Tensor 
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Copyright information

© Akadémiai Kiadó 1987

Authors and Affiliations

  • G. Gombos
    • 1
  • M. M. Mostafa
    • 2
  • H. Al-Sharaby
    • 3
  1. 1.Department for Low Temperature PhysicsRoland Eötvös UniversityBudapestHungary
  2. 2.Faculty of EducationAlexandria UniversityAlexandriaEgypt
  3. 3.Department of PhysicsUniversity of BaghdadBaghdadIraq

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