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Acta Physica Hungarica

, 62:15 | Cite as

Resistivity measurements in silicon inversion layers

  • G. Gombos
  • M. M. Mostafa
  • H. Al-Sharaby
Condensed Matter
  • 18 Downloads

Abstract

In this paper a simple method is presented for resistivity measurements on silicon inversion layers. The classical Van der Pauw method is applicable only if the thickness of the sample is a given value. In MOSFET structures the layer depth is the function of the gate voltage. We evaluated the inversion layer thickness from the DC drain current-gate voltage characteristic by using the delta depletion theory. After this the Van der Pauw method can be used.

Keywords

Sheet Resistance Gate Voltage Layer Depth Inversion Layer Resistivity Tensor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

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Copyright information

© Akadémiai Kiadó 1987

Authors and Affiliations

  • G. Gombos
    • 1
  • M. M. Mostafa
    • 2
  • H. Al-Sharaby
    • 3
  1. 1.Department for Low Temperature PhysicsRoland Eötvös UniversityBudapestHungary
  2. 2.Faculty of EducationAlexandria UniversityAlexandriaEgypt
  3. 3.Department of PhysicsUniversity of BaghdadBaghdadIraq

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