Skip to main content
Log in

CMOS and SiGe bipolar circuits for applications up to 110 GHz

Integrierte CMOS- und SiGe-Bipolarschaltungen für Anwendungen bis zu 110 GHz

  • Originalarbeiten
  • Published:
e & i Elektrotechnik und Informationstechnik Aims and scope Submit manuscript

Abstract

Recently, CMOS has been demonstrated to be a viable technology for very-high-bit-rate broad-band and wireless communication systems up to 40 Gb/s and 50 GHz. Advances in device scaling and doping-profile optimization have also resulted in SiGe bipolar transistors with impressive performance, including cut-off frequencies of more than 200 GHz. This paper presents advances in circuit design which fully exploit the high-speed potential of a 0.13 µm CMOS technology up to 50 GHz and of a high-performance SiGe bipolar technology up to 110 GHz operating frequency. The combination of advanced circuit techniques and a state-of-the-art fabrication-process technology results in continuing the upward shift of the frequency limits.

Zusammenfassung

Es wurde vor kurzem gezeigt, dass integrierte Schaltungen für sehr schnelle Breitbanddienste und für Funkanwendungen in CMOS-Technologie Datenraten von 40 Gb/s sowie Betriebsfrequenzen von 50 GHz erreichen können. Fortschritte bei der Bauelemente-Skalierung und Optimierung der Dotierstoffprofile führten auch bei SiGe-Bipolartransistoren zu bemerkenswerten Leistungsmerkmalen, insbesondere zu Grenzfrequenzen über 200 GHz. In diesem Beitrag wird über neue Ergebnisse im Schaltungsentwurf berichtet, die das Leistungspotenzial einer 0,13 µm CMOS-Technologie bis zu 50 GHz und das einer ausgereiften SiGe-Bipolartechnologie bis zu 110 GHz Betriebsfrequenz nachweisen. Das Zusammenwirken von neuartigen Schaltungsentwürfen mit hoch entwickelten Herstellungstechnologien führt zu einer stetig steigenden maximalen Betriebsfrequenz der integrierten Schaltkreise.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  • Böck, J. et al. (2002): Sub 5ps SiGe bipolar technology. International electron devices meeting (IEDM), Dec.: 763–766.

  • Kehrer, D. et al. (2003): 40-Gb/s 2:1 multiplexer and 1:2 demultiplexer in 120 nm standard CMOS. Int. Solid-State Circuits Conf., San Francisco, ISSCC, February 2003.

  • Knapp, H. et al. (2002): 25 GHz static frequency divider and 25 Gb/s multiplexer in 0.12 µm CMOS. IEEE Int. Solid-State Circuits Conf. ISSCC 2002, San Francisco, Feb. 3–7: 302–303.

  • Knapp, H. et al. (2003): 86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology. International Microwave Symposium, IEEE, June 2003: 1067–1070.

  • Krishnan, S. et al. (2002): 87 GHz static frequency divider in an InP-based Mesa DHBT technology. GaAs IC Symposium Digest. Oct.: 294–296.

  • Kudszus, S. et al. (2000): 94/47-GHz regenerative frequency divider MMIC with low conversion loss. Solid State Circuits 35, Sept.: 1312–1317.

    Article  Google Scholar 

  • Mokhtari, M. et al. (2002): 100 + GHz static divide-by-2 circuit in InP-DHBT technology. GaAs IC Symposium Digest, Oct.: 291–294.

  • Perndl, W. et al. (2003): A 98 GHz voltage controlled oscillator in SiGe bipolar technology. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Sept. 2003.

  • Rogers, J. et al. (2002): A 10 Gb/s CDR/DEMUX with LC delay line VCO in 0.18µm CMOS. IEEE International Solid-State Circuits Conf.: 254–255.

  • Rylyakov, A. et al. (2003): 100 GHz dynamic frequency divider in SiGe bipolar technology. Electronics Letters, 39, Jan.: 217–218.

    Article  Google Scholar 

  • Rylyakov, A. et al. (2003): A 30 Gb/s 1:4 demultiplexer in 0.12 µm CMOS. Int. Solid-State Circuits Conf. San Francisco, ISSCC, February 2003.

  • Schiml, T. et al. (2001): A 0.13 µm CMOS platform with Cu/Low-k interconnects for system on chip applications. VLSI Digest of Technical Papers, IEEE: 101–102.

  • Tanabe, A. et al. (2001): 0.18 µm CMOS 10 Gb/s multiplexer/demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuation. IEEE J. Solid-State Circuits 36, June: 988–996.

    Article  Google Scholar 

  • Tiebout, M. et al. (2002): A 1 V 1 mW 51 GHz fully integrated VCO in standard CMOS. IEEE Int. Solid-State Circuits Conf., ISSCC 2002, San Francisco, Feb. 3–7: 300–301.

  • Tsunashima, S. et al. (2002): 90 GHz operation of a novel dynamic frequency divider using InP /InGaAs HBTs. Indium Phosphide and Related Materials Conf. (IPRM), May: 43–46.

  • Wang, Hong Mo (2001): A 50 GHz VCO in 0.25 µm CMOS. ISSCC01 Digest of Technical Papers, IEEE Int. Solid-State Circuits Conf., February: 372–373.

  • Washio, K. et al. (2002): Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers. Trans. Electron Devices 49, Oct.: 1755–1760.

    Article  Google Scholar 

  • Wohlmuth, H.-D. et al. (2002): A high sensitivity static 2:1 frequency divider up to 27 GHz in 120 nm CMOS. Europ. Solid-State Circuit Conf., Firenze, Italy, IEEE, September: 823–826.

  • Wurzer, M. et al. (2002): 71.8 GHz static frequency divider in a Si/SiGe bipolar technology. Proc. of Bipolar/BiCMOS Circuits and Technology Meeting, IEEE, Sept.: Monterey, CA, USA, 216–219.

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. L. Scholtz Ao. Univ.-Prof. Dipl.-Ing. Dr. techn..

Additional information

Nach einem Hauptvortrag, gehalten anlässlich der Informationstagung Mikroelektronik ME 03 am 1. und 2. Oktober 2003 im Rahmen der VIET.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Scholtz, A.L., Kehrer, D., Tiebout, M. et al. CMOS and SiGe bipolar circuits for applications up to 110 GHz. Elektrotech. Inftech. 120, 271–275 (2003). https://doi.org/10.1007/BF03054901

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF03054901

Keywords

Schlüsselwörter

Navigation