Summary
White-beam synchrotron section topography was applied to a silicon crystal implanted with 4.8 MeV α-particles elastically bent with the radius of curvature close to 100 m. A number of section patterns corresponding to different reflections was analysed. It was found that the section pattern in the bent sample was drastically different from those observed in a flat sample. The difference consists in the occurrence of the sets of additional interference fringes covering a long distance up to several millimetres behind the main diffraction maximum. It was possible to reproduce some characteristic features of the fringes both in the implanted and non-implanted region by numerical integration of the Takagi-Taupin equation.
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Wieteska, K., Wierzchowski, W. & Graeff, W. Interference effects in Bragg-case synchrotron section topography of elastically bent silicon implanted crystals. Nouv Cim D 19, 233–239 (1997). https://doi.org/10.1007/BF03040978
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DOI: https://doi.org/10.1007/BF03040978