Summary
Triple-axis X-ray diffraction has been performed on a series of GaAs and InP crystals polished by different techniques. Symmetric-reflection reciprocal space maps show that the lattice strain normal to the surface does not vary with sample preparation but that the tilt distribution does vary greatly. Asymmetric reflections, which probe the in-plane strain distribution, reveal that the lattice strains are again constant for GaAs, although there is some variation in the InP data at high tilt distribution
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Moore, C.D., Pape, I. & Tanner, B.K. Triple-axis X-ray diffraction study of polishing damage in III-V semiconductors. Nouv Cim D 19, 205–212 (1997). https://doi.org/10.1007/BF03040974
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DOI: https://doi.org/10.1007/BF03040974