Summary
Section topographs made with synchrotron radiation show the strain field below the surface of silicon wafers which have gone through a process for integrated circuits. The contrast observed is a series of curved lines starting at one edge of an oxide layer and ending at its other edge. The strain is also calculated using the finite-element method. Electrical measurements such as the threshold voltage of a transistor are made in order to find the influence of the strain on the device performance and yield.
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Karilahti, M., Tuomi, T., Taskinen, M. et al. Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits. Nouv Cim D 19, 181–184 (1997). https://doi.org/10.1007/BF03040971
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DOI: https://doi.org/10.1007/BF03040971