Skip to main content
Log in

Kinetic properties of dislocations in semiconductors revealed by X-ray topography

  • Published:
Il Nuovo Cimento D

Summary

In situ X-ray topography (in situ X-TOP) gives the most reliable and quantitative information on kinetic processes of dislocations in semiconductors among all experimental techniques available now. This paper gives a review on generation, motion and impurity pinning of dislocations in silicon which were investigated by means ofin situ X-TOP. It is emphasized how effectivelyin situ X-TOP has been applied to clarify impurity-related dislocation processes.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Sumino K. andHarada H.,Philos. Mag. A,44 (1981) 1319.

    Article  ADS  Google Scholar 

  2. Clarke D. R., Kroll M. C., Kirchner P. D., Cook R. F. andHockey B. J.,Phys. Rev. Lett.,60 (1988) 2156.

    Article  ADS  Google Scholar 

  3. Minowa K. andSumino K.,Phys. Rev. Lett.,69 (1992) 320.

    Article  ADS  Google Scholar 

  4. Imai M. andSumino K.,Philos. Mag. A,47 (1983) 599.

    Article  ADS  Google Scholar 

  5. Sumino K. andImai M.,Philos. Mag. A,47 (1983) 753.

    Article  ADS  Google Scholar 

  6. Sato M. andSumino K. inDislocations in Solids, edited byH. Suzuki, T. Ninomiya, K. Sumino andS. Takeuchi (Univ. of Tokyo Press, Tokyo) 1985, p. 391.

    Google Scholar 

  7. Sumino K. inPoint and Extended Defects in Semiconductors, edited byG. Benedek, A. Cavallini andW. Schröter (Plenum, New York/London) 1989, p. 77.

    Google Scholar 

  8. Yonenaga I. andSumino K.,J. Appl. Phys.,80 (1996) 734.

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Sumino, K. Kinetic properties of dislocations in semiconductors revealed by X-ray topography. Nouv Cim D 19, 137–146 (1997). https://doi.org/10.1007/BF03040966

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF03040966

PACS

PACS

Navigation