Summary
In situ X-ray topography (in situ X-TOP) gives the most reliable and quantitative information on kinetic processes of dislocations in semiconductors among all experimental techniques available now. This paper gives a review on generation, motion and impurity pinning of dislocations in silicon which were investigated by means ofin situ X-TOP. It is emphasized how effectivelyin situ X-TOP has been applied to clarify impurity-related dislocation processes.
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Sumino, K. Kinetic properties of dislocations in semiconductors revealed by X-ray topography. Nouv Cim D 19, 137–146 (1997). https://doi.org/10.1007/BF03040966
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DOI: https://doi.org/10.1007/BF03040966