Capacitance-voltage measurements have been carried out onp-type ɛ-GaSe single crystal ∥c in the temperature range 300 to 360 K, with applied voltages of -1, 0 and +1 V. TheC-V measurements in this temperature range have shown a shift in capacitanceC and conductanceG to the higher values with an increase in temperature. The depletion layer widthW, the Debye length LD and the doping densityNα have been worked out and plots ofNαvs. W have shown a decrease inW with an increase in temperature. The plots of LDvs. Nα vary as 1/Nα1/2, which gives NαLD ⋍ 3.3 × 1011 charges/m2 for doping density of 1016m−3. The values ofG at different temperatures have been used to obtain the activation energies, which are found to be ΔE ⋍ 0.11 eV for -1 and +1 V applied voltages, and ΔE ⋍ 0.06 eV for zero volt.
Conductivity phenomena in semiconductors and insulators
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