Il Nuovo Cimento D

, Volume 20, Issue 2, pp 241–245 | Cite as

Capacitance-voltage behaviour inp-type ɛ-GaSe single crystal ∥c at different temperatures

  • M. K. Anis
  • S. H. Zaidi


Capacitance-voltage measurements have been carried out onp-type ɛ-GaSe single crystal ∥c in the temperature range 300 to 360 K, with applied voltages of -1, 0 and +1 V. TheC-V measurements in this temperature range have shown a shift in capacitanceC and conductanceG to the higher values with an increase in temperature. The depletion layer widthW, the Debye length LD and the doping densityN α have been worked out and plots ofN α vs. W have shown a decrease inW with an increase in temperature. The plots of LD vs. N α vary as 1/N α 1/2 , which gives NαLD ⋍ 3.3 × 1011 charges/m2 for doping density of 1016m−3. The values ofG at different temperatures have been used to obtain the activation energies, which are found to be ΔE ⋍ 0.11 eV for -1 and +1 V applied voltages, and ΔE ⋍ 0.06 eV for zero volt.

PACS 72.20

Conductivity phenomena in semiconductors and insulators 


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Copyright information

© Società Italiana di Fisica 1998

Authors and Affiliations

  • M. K. Anis
    • 1
  • S. H. Zaidi
    • 2
  1. 1.Department of PhysicsUniversity of KarachiKarachiPakistan
  2. 2.Department of Applied PhysicsUniversity of KarachiKarachiPakistan

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