Abstract
Interface characteristics possess very important influence on the performance of thin film devices. ITO/PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy (XPS) and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTCDA/p-Si, not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of Ols and Ols are more remarkable.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
C. W. Tang and S. A. VanSlyke,Appl Phys Lett,51(1987), 913.
V. Bulovic, P. Tian, P. E. Burrows, M. R. Gokhale, S. R. Forrest, and M. E. Thompson,Appl Phys Lett,70(1997), 2954.
D. L. Mathine, H. S. Woo, W. He, T. W. Kim, B. Kippelen., and N. Peyghambarian,Appl Phys Lett.,76(2000), 3849.
Yoichi Mada, Suehiro Sugitani, Kunihiro Arai, and Kimiyoshi Yamasaki,J Vac Sci Technol A,19(2001), 883.
S. R. Forrest,Chem Rev,97(1997), 1793.
Zhang Fujia, Wang Deming, Zhang Dejiang, Gan Runjin, and Liu Fengmin,Chinese J Semiconductor Optcelectronics,21 (2000), 182.
S. R. Forrest, M. L. Kaplan, and P. H. Schmidt,J. Appl Phys,55(1984), 1492.
S. R. Forrest, M. L. Kaplan, and P. H. Schmidt,J. Appl Phys,56(1984), 543.
Xu Xuemei, Peng Jingcui, Li Hongjian, Qu Shu, and Zhao Chujun,Chinese J. Optoelectronics · Laser,15(2004), 572.
He Xiyuan, Zhang Xu, Zheng Daishun Gao Zhaoyang, Zhang Fujia.Chinese J. Optoelectronics · Laser,14(2003), 336.
Peng Yingquan, Zheng Daishun, and Zhang Xu,Chinese J. Optoelectronics · Laser,14(2003), 767
Quoc Toan Le, F. M. Avendano, E. W. Forsythe, Li Yan, Yongli Gao, and C. W. Tang,Vac. Sci. Technol. A,17(1999), 2314.
D. T. Clark, T. Fok, G. G. Roberts, and R. W. Sykes,Thin Solid Films,70(1980), 261.
Wang Yunzhen and Jiang Changgen,Chinese J. Semiconductors,7(1986), 596.
Author information
Authors and Affiliations
Corresponding author
Additional information
Project is supported by the National Natural Science Foundation of China (Grant No 60076023)