Journal of Electronic Materials

, Volume 20, Issue 12, pp 1091–1094 | Cite as

Optical and electrical characterization ofn- andp-type Fe-doped InP

  • F. Mosel
  • A. Seidl
  • D. Hofmann
  • G. Müller


N-andp-type Fe doped InP crystals were grown by the LEC technique by co-doping with Zn and Te, respectively. The incorporation of these dopants is examined by chemical, electrical and optical analysis. The electronic transport properties of the InP: Fe, Zn crystal are investigated by a comparison of Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor.

Key words

InP Fe-doped compensation 


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Copyright information

© The Minerals, Metals & Materials Society 1991

Authors and Affiliations

  • F. Mosel
    • 1
  • A. Seidl
    • 1
  • D. Hofmann
    • 1
  • G. Müller
    • 1
  1. 1.Institut für Werkstoffwissenschaften 6, KristallaborUniversität Erlangen-NürnbergErlangenGermany

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