Epitaxial deposition of NiO film on a cube-textured Ni substrate by metal-organic chemical vapor deposition
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NiO films have been epitaxially grown by metal-organic chemical vapor deposition (MOCVD) on a bi-axially textured Ni substrate using Ni(thd)2 as a precursor. The NiO film was deposited at 470°C for 10 min at a deposition pressure of 10 Torr and oxygen partial pressure of 0.91 Torr. SEM and AFM observations for the deposited NiO film showed a smooth and dense morphology. X-ray rocking curve and φ-scan showed that the NiO film has a bi-axial texture with a (100)<001> orientation. The out-of-plane and the in-plane deviations were measured to be 4.2° and 6~7° from the FWHM of (200) and (111) planes, respectively.