Metals and Materials

, Volume 3, Issue 4, pp 272–276 | Cite as

Development of x-ray mask fabrication process using w-sputtering

  • Taeho Lee
  • Seungyoon LeE
  • Jinho Ahn


Properties of DC magnetron sputter-deposited W and WNx absorber films were investigated for x-ray mask applications. Low stress film (5 x 108 dyne/cm2 tensile stress) is difficult to obtain with pure Ar gas as the film stress changes from highly compressive to highly tensile with pressure change. The variation of stress with pressure is significantly reduced with N2/Ar mixture gas, and a reasonable tensile stress and stress stability were obtained with 5% N2 at 3.5 mTorr. Film density decreases with increasing sputtering pressure and N2/Ar + N2 ratio. XRD patterns for films deposited at 3.5 mTorr show crystalline α-W structure for Ar sputtered film but amorphous structure for 5% N2-sputtered film. Surface smoothness is very good at 5% N2 but further increase of N2/Ar+N2 ratio results in a surface roughening and this is also confirmed by TEM analysis. At this sputtering condition (5% N2, 3.5 mTorr), film stress stability during air-exposure and annealing was also superior, suggesting a optimum process condition for W-based absorber films.


Stress Change Absorber Material Optimum Process Condition Surface Smoothness Film Stress 
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  1. 1.
    M. Itoh and M. Hori,J. Vac. Sci. & Technol. B9, 165 (1991).CrossRefGoogle Scholar
  2. 2.
    K. Suzuki and Y. Shimizu,Microelectronic Eng. 14, 207 (1991).CrossRefGoogle Scholar
  3. 3.
    T. Inoue, T. Kanayama and M. Komuro,J. Vac. Sci. & Technol. 11, 2943 (1993).CrossRefGoogle Scholar
  4. 4.
    T. Yoshihara, S. Kotsuji and K. Suzuki,J. Vac. Sci. & Technol. 14, 4363 (1996).CrossRefGoogle Scholar
  5. 5.
    Y. Iba, F. Kumasaka, H. Aoyama, T. Taguchi and M. Yamabe,Jpn. J. Appl. Phys. 35, 6463 (1996).CrossRefADSGoogle Scholar
  6. 6.
    M. Itoh, M. Hori and S. Nadahara,J. Vac. Sci. & Technol. B9, 149 (1991).CrossRefGoogle Scholar
  7. 7.
    T. Ogawa, T. Soga, Y. Maruyama, H. Oizumi and K. Mochiji,J. Vac. Sci. & Technol. 10, 1193 (1992).CrossRefGoogle Scholar
  8. 8.
    C. Khan Malek and B. Kebabi,J. Vac. Sci. & Technol. 9, 3329 (1991).CrossRefGoogle Scholar
  9. 9.
    S. Tsuboi, Y. Yamashita, T. Matsuo, T. Ohta, T. Shoki, T. Yoshihara, T. Taguchi, S. Mitsui, S. Noda, K. Suzuki, H. Hoga, Y. Yamaguchi and Suzuki,Jpn. J. Appl. Phys. 35, 2845 (1996).CrossRefADSGoogle Scholar
  10. 10.
    M. Oda, A. Ozawa, S. Ohki and H. Yoshihara,Jpn. J. Appl. Phys. 29, 2616 (1990).CrossRefADSGoogle Scholar
  11. 11.
    R. R. Kola, G. K. Celler, J. Frackoviak, C. W. Jurgensen and L. E. Trimble,J. Vac. Sci & Technol. 9, 3301 (1991).CrossRefGoogle Scholar
  12. 12.
    Y. C. Ku, H. I. Smith, and I. Plotnik,Microelectronic Eng. 11, 303 (1990).CrossRefGoogle Scholar
  13. 13.
    W. J. Dauksher, D. J. Resnick, K. D. Cummings, J. Baker, R. B. Gregory, N. D. Theodore, J. A. Chan, W. A. Johnson, C. J. Mogab, M. -A. Nicolet and J. S. Reid,J. Vac. Sci. & Technol. 13, 3103 (1995).CrossRefGoogle Scholar
  14. 14.
    N. Yoshioka, S. Takeuchi, H. Morimoto and Y. Watakabe,SPIE 923, 2 (1988).Google Scholar
  15. 15.
    H. Yabe, K. Marumoto, S. Aya, N. Yoshioka, T. Fujino, Y. Watakabe and Y. Matsui,Jpn. J. Appl. Phys. 31, 4210 (1992).CrossRefADSGoogle Scholar
  16. 16.
    T. Kanayama, M. Sugawara and J. Itoh,J. Vac. Sci. & Technol. 6, 174 (1988).CrossRefGoogle Scholar
  17. 17.
    S. Sugihara, K. Murooka, M. Itoh, I. Higashikawa and Y. Gomei,Jpn. J. Appl. Phys. 34, 6716 (1995).CrossRefADSGoogle Scholar
  18. 18.
    G. K. Celler, L. E. Trimble, J. Frackoviak, C. W. Jurgersen and R. K. Kola,Appl. Phys. Lett. 59, 3105 (1991).CrossRefADSGoogle Scholar
  19. 19.
    J. A. Thornton,J. Vac. Sci. & Technol. 11, 666 (1974).CrossRefADSGoogle Scholar
  20. 20.
    A. M. Haghiri-Gosnet, F. R. Ladan, C. Mayeux, H. Launois and H. Launois,J. Vac. Sci. & Technol. Al, 2663 (1989).Google Scholar
  21. 21.
    L. A. Girifallo and V. G. Weizer,Phys. Rev. 114, 687 (1589).CrossRefGoogle Scholar
  22. 22.
    Karl-Heinz Müller,J. Appl. Phys. 62, 1796 (1987).CrossRefADSGoogle Scholar

Copyright information

© Springer 1997

Authors and Affiliations

  • Taeho Lee
    • 1
  • Seungyoon LeE
    • 1
  • Jinho Ahn
    • 1
  1. 1.Department of Materials EngineeringHanyang UniversitySeondong-ku, SeoulKorea

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