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Linewidth evolution in semiconductor lasers throughout threshold

évolution de la largeur spectrale des lasers semiconducteurs au passage du seuil

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Abstract

A detailed experimental and theoretical investigation on the evolution of linewidth Av(I) function of injection current for different structures of semiconductor lasers has been undertaken. Linewidth shows a continuous transition and tends asymptotically on either side to Schawlow-Townes inverse power behaviours. In a small current zone at threshold warping of the linewidth is observed depending on linewidth enhancement factor a and laser structure. Different models including fluctuations are used in order to describe the coherence evolution : asymptotic behaviours by simple linear response model of Van der Pol equation (VdP), continuous evolution by phase transition Landau model (L) and complete description including a using Fokker-Planck field probability density resolution (fp). All models show the same asymptotic behaviour. (fp) seems to be the best-adapted one because it includes intrinsically phase-amplitude coupling. These models lead to a new determination method of spontaneous emission rate R, α, number of photons at saturation Ss and cavity photon lifetime tp by fitting only two direct measurements (linewidth and optical power).

Résumé

Une étude expérimentale et théorique très approfondie a été effectuée sur l’évolution d’un mode d’oscillation pour différentes structures récentes de laser à semiconducteur en fonction du courant de polarisation. L’évolution de la largeur spectrale montre une variation de la cohérence sans discontinuité au seuil et tend asymptotiquement, au-dessus et au-dessous, vers les comportements de Schawlow-Townes inversement proportionnels à la puissance. Au seuil, sur une gamme de courants étroite, un comportement résonnant plus ou moins marqué, dépendant du facteur d’élargissement spectral a et de la structure du laser est observé. Différents modèles pour décrire l’ évolution continue de la cohérence : méthode de la réponse linéaire appliquée à l’équation de Van der Pol (VdP), modèle des transitions de phase de Landau (l) et résolution de l’équation de Fokker Planck sur la densité de probabilité incluant a (fp) sont utilisés. Le modèle (fp) semble le plus approprié, parce qu’il inclut de façon intrinsèque la notion de couplage phase-amplitude. Ces modèles, par l’ajustement de deux mesures directes (largeur spectrale et puissance optique), constituent une méthode nouvelle de détermination du taux d’émission spontanée R, du facteur a, du nombre de photons à saturation Ss et du temps de vie des photons tp.

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Authors and Affiliations

  1. Laboratoire d’optoélectronique, service Radio SUPÉLEC, Plateau de Moulon, F-91192, Gif-sur-Cvette Cedex, France

    Christelle Birocheau, Zeno Toffano & Alain Destrez

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  1. Christelle Birocheau
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  2. Zeno Toffano
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  3. Alain Destrez
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Birocheau, C., Toffano, Z. & Destrez, A. Linewidth evolution in semiconductor lasers throughout threshold. Ann. Télécommun. 49, 607–618 (1994). https://doi.org/10.1007/BF03001315

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  • DOI: https://doi.org/10.1007/BF03001315

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