Skip to main content
Log in

Molecular dynamics study on external field induced crystallization of amorphous argon structure

  • Published:
KSME International Journal Aims and scope Submit manuscript

Abstract

A molecular dynamics study has been conducted on an external-force-field-induced isothermal crystallization process of amorphous structures as a new low-temperature athermal crystallization process. An external cyclic-force field with a dc bias is imposed on molecules selected randomly in an amorphous-phase of argon. Multiple peaks smoothed out in the radial distribution functions for amorphous states appear very clearly during the crystallization process that cannot be achieved otherwise. When the amorphous material is locally exposed to an external force field, crystallization starts and propagates from the interfacial region and crystallization growth rates can be estimated.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

Abbreviations

A:

Amplitude of external force

B:

DC bias for external fields

F:

External force

g:

Radial distribution function

L:

Simulation domain size

m:

Molecular mass

N:

Total number of molecules

γij :

Inter-distance between molecules i and j

T:

Temperature

X,Y,Z:

Cartesian coordinates

ε:

Energy parameter

ρ:

Number density

σ:

Length parameter

Φ:

Potential function

τ:

Time

*:

Dimensionless

References

  • Ahn, J. H., Lee, J. N., Kim, Y. C. and Ahn, B. T., 2002, “Microwave-Induced Low-Temperature Crystallization of Amorphous Si Thin Films,”Current Applied Physics, Vol. 2, pp. 135–139.

    Article  Google Scholar 

  • Allen, M. P. and Tildesley, D. J., 1987,Computer Simulation of Liquids, Oxford University Press, New York.

    Google Scholar 

  • Caturla, M. J., Diaz de la Rubia, T. and Gilmor, G. H., 1995, “Recrystallization of a Planar Amorphous-Crystalline Interface in Silicon by Low Energy Recoils: A Molecular Dynamics Study,”J. Appl. Phys., Vol. 77, pp. 3121–3125.

    Article  Google Scholar 

  • Cho, S. S. and Park, S. H., 2002,” Molecular Dynamics Simulation of Adhesion Processes,”KSME Int. J., Vol. 16, pp. 1440–1447.

    Article  Google Scholar 

  • Haile, J. M., 1992,Molecular Dynamics Simulation, John Wiley & Sons, pp. 260–267.

  • Jang, J., Oh, J. Y., Kim, S. K., Choi, Y. J., Yoon, S. Y. and Kim, C. O., 1998, “Electric- Field-Enhanced Crystallization of Amorphous Silicon,”Nature, Vol. 395, pp.481–4833.

    Article  Google Scholar 

  • Kittel, C, 1996,Introduction to Solid State Physics, 7th Ed., John Wiley & Sons, p. 126.

  • Lee, J. I., Park, S. H., Kwon, O. M., Choi, Y. K. and Lee, J. S., 2002, “Characterization of Thin Liquid Films Using Molecular Dynamics Simulation,” KSME Int. J., Vol. , pp. 1477–1484.

  • Mandell, M. J., McTague, J. P. and Rahman, A., 1976, “Crystal Nucleation in a Three-Dimensional Lennard-Jones System: A Molecular Dynamics Study,”J. Chem. Phys., Vol. 64, pp. 3699–3702.

    Article  Google Scholar 

  • Mandell, M. J., McTague, J. P. and Rahman, A., 1977, “Crystal Nucleation in a Three-Dimensional Lennard-Jones System. II. Nucleation Kinetics for 256 and 500 Particles,”J. Chem. Phys., Vol. 66, pp. 3070–3075.

    Article  Google Scholar 

  • Motooka, T., 1997, “Molecular Dynamics Simulations for Amorphous/Crystalline Si Interface: Amorphization and Crystallization Induced by Simple Defects,”Nuclear Instruments and Methods in Physics Research B, Vol. 127/128, pp. 244–247.

    Article  Google Scholar 

  • Motooka, T., 1998, “The Role of Defects during Amorphization and Crysatllization Processes in Ion Implanted Si,”Materials Science and Engineering, Vol. A253, pp. 42–49.

    Article  Google Scholar 

  • Park, S. H., Kim, H. J., Lee, D. B., Lee, J. S., Choi, Y. K. and Kwon, O. M., 2004, “Hetero- geneous Crystallization of Amorphous Silicon Expedited by External Force Fields: A Molecular Dynamics Study,”Superlattices and Microstructures, Vol. 35, pp. 205–215.

    Article  Google Scholar 

  • Pickering, S. and Snook, I., 1997, “Molecular Dynamics Study of the Crystallization of Metastable Fluids,”Physica A, Vol. 240, pp. 297–304.

    Article  Google Scholar 

  • Sameshima, T., 1998, “Status of Si Thin Film Transistors,”J. Non-Crystalline Solids, Vol. 227-230, pp. 1196–1201.

    Article  Google Scholar 

  • Swope, W. C. and Anderson, H. C, 1990, “106 — Particle Molecular-Dynamics Study of Homogeneous Nucleation of Crystals in a Supercooled Atomic Liquid,”Physical Review B, Vol. 41, No. 10, pp. 7042–7054.

    Article  Google Scholar 

  • Swope, W. C, Anderson, H. C., Berens, P. H. and Wilson, K. R., 1982, “A Computer Simulation Method for the Calculation of Equilibrium Constants for the Formation of Physical Clusters of Molecules: Application to Small Water Clusters,”J. Chem. Phys., Vol. 76, pp. 637–649.

    Article  Google Scholar 

  • Tanaka, K., Maruyama, E., Shimada, T. and Okamoto, H., 1999, Amorphous Silicon, John Wiley & Sons, pp. 27–29.

  • Tanemura, M., Hiwatari, Y., Matsuda, H., Ogawa, T., Ogita, N. and Ueda, A., 1977, “Geometrical Analysis of Crystallization of the Soft-Core Model,”Prog. Theor. Phys., Vol. 58, pp. 1079–1095.

    Article  Google Scholar 

  • Weber, B., Gartner, K. and Stock, D. M., 1997, “MD-Simulation of Ion Induced Crystallization of Amorphization Process in Silicon,”Nuclear Instruments and Methods in Physics Research B, Vol. 127/128, pp. 239–243.

    Article  Google Scholar 

  • Yang, J. X., Gould, H. and Klein, W., 1998, “Molecular Dynamics Investigation of Deeply Quenched Liquids,”Physical Review Letters, Vol. 60, No. 25, pp. 2665–2668.

    Article  Google Scholar 

  • Yoon, S. Y., Park, S. J., Kim, K. H. and Jang, J., 2001, “Metal-Induced Crystallization of Amorphous Silicon,”Thin Solid Films, Vol. 383, pp. 34–38.

    Article  Google Scholar 

  • Zhao, Y., Wang, W., Yun, F., Xu, Y., Liao, X., Ma, Z., Yue, G. and Kong, G., 2000, “Polycrystalline Silicon Films Prepared by Improved Pulsed Rapid Thermal Annealing,”Solar Energy Materials & Solar Cells, Vol. 62, pp. 143–148.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Seungho Park.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Park, S., Cho, S.S., Lee, J.S. et al. Molecular dynamics study on external field induced crystallization of amorphous argon structure. KSME International Journal 18, 2042–2048 (2004). https://doi.org/10.1007/BF02990446

Download citation

  • Received:

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02990446

Key Words

Navigation