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Journal of Computer Science and Technology

, Volume 19, Issue 5, pp 708–717 | Cite as

Leakage current estimation of CMOS circuit with stack effect

  • Yong-Jun XuEmail author
  • Zu-Ying Luo
  • Xiao-Wei Li
  • Li-Jian Li
  • Xian-Long Hong
Article

Abstract

Leakage current of CMOS circuit increases dramatically with the technology scaling down and has become a critical issue of high performance system. Subthreshold, gate and reverse biased junction band-to-band tunneling (BTBT) leakages are considered three main determinants of total leakage current. Up to now, how to accurately estimate leakage current of large-scale circuits within endurable time remains unsolved, even though accurate leakage models have been widely discussed. In this paper, the authors first dip into the stack effect of CMOS technology and propose a new simple gate-level leakage current model. Then, a table-lookup based total leakage current simulator is built up according to the model. To validate the simulator, accurate leakage current is simulated at circuit level using popular simulator HSPICE for comparison. Some further studies such as maximum leakage current estimation, minimum leakage current generation and a high-level average leakage current macromodel are introduced in detail. Experiments on ISCAS85 and ISCAS89 benchmarks demonstrate that the two proposed leakage current estimation methods are very accurate and efficient.

Keywords

computer-aided design leakage current estimation stack effect macromodeling propagation of signal probability 

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Copyright information

© Science Press, Beijing China and Allerton Press Inc., Beijing China and Allerton Press Inc. 2004

Authors and Affiliations

  • Yong-Jun Xu
    • 1
    • 2
    Email author
  • Zu-Ying Luo
    • 3
  • Xiao-Wei Li
    • 1
    • 2
  • Li-Jian Li
    • 4
  • Xian-Long Hong
    • 3
  1. 1.Institute of Computing TechnologyThe Chinese Academy of SciencesBeijingP.R. China
  2. 2.Graduate School of Chinese Academy of SciencesBeijingP.R. China
  3. 3.Department of Computer Science and TechnologyTsinghua UniversityBeijingP.R. China
  4. 4.National ASIC Design Engineering Center, Institute of AutomationThe Chinese Academy of SciencesBeijingP.R. China

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