Growth of undoped and Te doped InSb crystals by vertical directional solidification technique
We have successfully grown high mobility undoped and Te doped InSb crystals of size 10–12 mm dia. and 60 mm length under inert argon atmosphere in closed quartz ampoules, by vertical directional solidification (VDS) technique. The crystals showed predominantly (220) orientation along the growth axis. The surface defects, such as voids were reduced drastically by selecting proper lowering rate, rotational speed and cone angle of the ampoule. The high mobility and quality crystals were obtained with the ampoule conical angle less than 20°, lowering rate 5mm/h, and rotational speed 10 rpm.
KeywordsInSb crystals directional solidification quartz ampoule cone angle Hall measurement inert atmosphere
Unable to display preview. Download preview PDF.
- Asauskas R, Dobro Volskis and Krotkus A 1980Sov. Phys. Semicond. 14 1377Google Scholar
- Gadkari D B, Lai K B and Arora B M 1994Solid State Phys. (India) C37 198; DAE Symp. (Jaipur: Rajasthan Univ)Google Scholar
- Gadkari D B, Lai K B, Singh A J and Arora B M 1995Proc. VI national seminar on crystal growth (Madras: Anna Univ.) p. 34Google Scholar
- Gadkari D B, Lal K B, Shah A P and Arora B M 1995Solid State Phys. (India) C38 148;DAE Symp. (Calcutta: ACS)Google Scholar
- International Centre for Diffraction Data 1994 Card No. 6-208, p. 327; NBS circular 539 (1955) p. 73Google Scholar
- Moorwood A F 1993SPIE Int. Soc. Opt. Eng. 1946 461Google Scholar
- Ohaski T 1986J. Vac. Sci. Technol. B4 622Google Scholar
- Rayners J et al 1993SPIE Int. Soc. Opt. Eng. 1946 490Google Scholar
- Van der Pauw L J 1958 Philips Res. Report 13, pp 1–9Google Scholar