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Bulletin of Materials Science

, Volume 21, Issue 2, pp 127–131 | Cite as

Growth of undoped and Te doped InSb crystals by vertical directional solidification technique

  • D B Gadkari
  • K B Lal
  • B M Arora
Article

Abstract

We have successfully grown high mobility undoped and Te doped InSb crystals of size 10–12 mm dia. and 60 mm length under inert argon atmosphere in closed quartz ampoules, by vertical directional solidification (VDS) technique. The crystals showed predominantly (220) orientation along the growth axis. The surface defects, such as voids were reduced drastically by selecting proper lowering rate, rotational speed and cone angle of the ampoule. The high mobility and quality crystals were obtained with the ampoule conical angle less than 20°, lowering rate 5mm/h, and rotational speed 10 rpm.

Keywords

InSb crystals directional solidification quartz ampoule cone angle Hall measurement inert atmosphere 

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References

  1. Asauskas R, Dobro Volskis and Krotkus A 1980Sov. Phys. Semicond. 14 1377Google Scholar
  2. Baranski P I, Gorodnichi O P and Shevchenko V V 1990Infrared Phys. 30 59CrossRefGoogle Scholar
  3. Byueng-Su Yoo, Mark A McKee, Sang -Gi Kim and El-Hang Lee 1993Solid State Commun. 88 447CrossRefGoogle Scholar
  4. Chen L P, Lou J J, Liu T H, Pang Y M and Yang S J 1992Solid State Electron. 35 1081CrossRefGoogle Scholar
  5. Derabail R and Wilcox W R 1992J. Cryst. Growth 119 98CrossRefGoogle Scholar
  6. Eagen R J et al 1994Semicond. Sci. Technol. 9 1591CrossRefGoogle Scholar
  7. Gadkari D B, Lai K B and Arora B M 1994Solid State Phys. (India) C37 198; DAE Symp. (Jaipur: Rajasthan Univ)Google Scholar
  8. Gadkari D B, Lai K B, Singh A J and Arora B M 1995Proc. VI national seminar on crystal growth (Madras: Anna Univ.) p. 34Google Scholar
  9. Gadkari D B, Lal K B, Shah A P and Arora B M 1995Solid State Phys. (India) C38 148;DAE Symp. (Calcutta: ACS)Google Scholar
  10. Garanuet J P, Differ T and Favier J J 1990J. Cryst. Growth 106 426CrossRefGoogle Scholar
  11. International Centre for Diffraction Data 1994 Card No. 6-208, p. 327; NBS circular 539 (1955) p. 73Google Scholar
  12. Jung Y J, Park M K, Tae S I, Lee K H and Lee H J 1991J. Appl. Phys. 69 3109CrossRefGoogle Scholar
  13. Kim K M 1978J. Cryst. Growth 44 413CrossRefGoogle Scholar
  14. Lee G S, Thomson P E, Davis J L, Omaggio M K and Schidtt W A 1993Solid State Electron. 36 387CrossRefGoogle Scholar
  15. Lin M H and Kou S 1995J. Cryst. Growth 152 256CrossRefGoogle Scholar
  16. Look D C 1990J. Electrochem. Soc. 137 260CrossRefGoogle Scholar
  17. Michel E, Singh G, Slivkeen S, Besikci C and Bove P 1994Appl. Phys. Lett. 65 3338CrossRefGoogle Scholar
  18. Moorwood A F 1993SPIE Int. Soc. Opt. Eng. 1946 461Google Scholar
  19. Mulski G and Neumann G 1982J. Ctyst. Growth 59 548CrossRefGoogle Scholar
  20. Ohaski T 1986J. Vac. Sci. Technol. B4 622Google Scholar
  21. Potard C 1981J. Cryst. Growth 54 558CrossRefGoogle Scholar
  22. Rayners J et al 1993SPIE Int. Soc. Opt. Eng. 1946 490Google Scholar
  23. Straus A J 1959J. Appl. Phys. 30 559CrossRefGoogle Scholar
  24. Van der Pauw L J 1958 Philips Res. Report 13, pp 1–9Google Scholar
  25. Witt A F and Gatos H C 1968J. Electrochem. Soc. 115 70CrossRefGoogle Scholar
  26. Weber W, Neumann G and Muller G 1990J. Cryst. Growth 100 145CrossRefGoogle Scholar
  27. Zhou J L, Wilcox W R and Regel L L 1993J. Cryst. Growth 128 173CrossRefGoogle Scholar

Copyright information

© Indian Academy of Sciences 1998

Authors and Affiliations

  • D B Gadkari
    • 1
  • K B Lal
    • 1
  • B M Arora
    • 1
  1. 1.Department of PhysicsMithibai CollegeMumbaiIndia

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