The thermoelectric transistor A possible batteryless amplifying semiconductor device
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A signal, modulating by carrier emission the concentration of free carriers in a semiconductor wafer containing a temperature gradient, is reproduced by the thermoelectric voltage between output electrodes at different temperatures. The conditions for power amplification are discussed. Criteria are derived for the choice of material, geometrical shape and heat flow through an amplifying device. The use of Ge seems to be possible, though difficult. New semiconducting materials show promising properties.
KeywordsHeat Flux Density Minority Carrier Mobility Ratio Heat Reservoir Semiconductor Wafer
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