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Applied Scientific Research, Section B

, Volume 6, Issue 1, pp 369–378 | Cite as

The thermoelectric transistor A possible batteryless amplifying semiconductor device

  • Andreas Kelen
  • Per Svedberg
Article
  • 21 Downloads

Summary

A signal, modulating by carrier emission the concentration of free carriers in a semiconductor wafer containing a temperature gradient, is reproduced by the thermoelectric voltage between output electrodes at different temperatures. The conditions for power amplification are discussed. Criteria are derived for the choice of material, geometrical shape and heat flow through an amplifying device. The use of Ge seems to be possible, though difficult. New semiconducting materials show promising properties.

Keywords

Heat Flux Density Minority Carrier Mobility Ratio Heat Reservoir Semiconductor Wafer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1).
    Note of U.S. Army Signal Corps, Elect. Engng.74 (1955) 1120.Google Scholar
  2. 2).
    Garrett, C. G. B. and W. H. Brattain, Phys. Rev.95 (1954) 1091.CrossRefADSGoogle Scholar
  3. 3).
    Geballe, T. H. and G. W. Hull, Phys. Rev.94 (1954) 1134.CrossRefADSGoogle Scholar
  4. 4).
    Johnson, V. A. and K. Lark-Horovitz, Phys. Rev.92 (1953) 226.MATHCrossRefADSGoogle Scholar
  5. 5).
    Shockley, W., Electrons and holes in semi conductors, Van Nostrand, New-York 1950, p. 233 ff.Google Scholar

Copyright information

© Martinus Nijhoff 1957

Authors and Affiliations

  • Andreas Kelen
    • 1
  • Per Svedberg
    • 2
  1. 1.Research LaboratoriesAllmänna Svenska Elektriska AktiebolagetVästerasSweden
  2. 2.Institute for Semiconductor ResearchStockholmSweden

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