Applied Scientific Research, Section B

, Volume 6, Issue 1, pp 369–378 | Cite as

The thermoelectric transistor A possible batteryless amplifying semiconductor device

  • Andreas Kelen
  • Per Svedberg


A signal, modulating by carrier emission the concentration of free carriers in a semiconductor wafer containing a temperature gradient, is reproduced by the thermoelectric voltage between output electrodes at different temperatures. The conditions for power amplification are discussed. Criteria are derived for the choice of material, geometrical shape and heat flow through an amplifying device. The use of Ge seems to be possible, though difficult. New semiconducting materials show promising properties.


Heat Flux Density Minority Carrier Mobility Ratio Heat Reservoir Semiconductor Wafer 
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Copyright information

© Martinus Nijhoff 1957

Authors and Affiliations

  • Andreas Kelen
    • 1
  • Per Svedberg
    • 2
  1. 1.Research LaboratoriesAllmänna Svenska Elektriska AktiebolagetVästerasSweden
  2. 2.Institute for Semiconductor ResearchStockholmSweden

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