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High sp3 content hydrogen-free amorphous diamond: an excellent electron field emission material

  • Dongsheng Mao
  • Jun Zhao
  • Wei Li
  • Xi Wang
  • Xianghuai Liu
  • Yukun Zhu
  • Qiong Li
  • Jingfang Xu
Article

Abstract

Details are given of a study of the characteristics of field-induced electron emission from hydrogen-free high sp3 content (>90%) amorphous diamond (a-D) film deposited on heavily doped (ρ<0.01ω·cm) n-type monocrystalline Si (111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. The emission current can reach 0.9 μA at applied field as low as 1 V/μm, and the emission current density can be about several mA/cm2 under 20 V/μm. The emission current is stable when the beginning current is at 50 μA within 72 h. Uniform fluorescence display of electron emission from the whole face of the a-D film under the electric field of 10–12 V/μm is also observed. The contribution of excellent electron emission property results from the smooth, uniform, amorphous surface and high sp3 content of the a-D film.

Keywords

hydrogen-free amorphous diamond film sp3 electron field emission work function 

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Copyright information

© Science in China Press 1999

Authors and Affiliations

  • Dongsheng Mao
    • 1
  • Jun Zhao
    • 1
  • Wei Li
    • 1
  • Xi Wang
    • 1
  • Xianghuai Liu
    • 1
  • Yukun Zhu
    • 2
  • Qiong Li
    • 2
  • Jingfang Xu
    • 2
  1. 1.Ion Beam Laboratory, Shanghai Institute of MetallurgyChinese Academy of SciencesShanghaiChina
  2. 2.Department of Electronics Science and TechnologyEast China Normal UniversityShanghaiChina

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