High sp3 content hydrogen-free amorphous diamond: an excellent electron field emission material
- 14 Downloads
Details are given of a study of the characteristics of field-induced electron emission from hydrogen-free high sp3 content (>90%) amorphous diamond (a-D) film deposited on heavily doped (ρ<0.01ω·cm) n-type monocrystalline Si (111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. The emission current can reach 0.9 μA at applied field as low as 1 V/μm, and the emission current density can be about several mA/cm2 under 20 V/μm. The emission current is stable when the beginning current is at 50 μA within 72 h. Uniform fluorescence display of electron emission from the whole face of the a-D film under the electric field of 10–12 V/μm is also observed. The contribution of excellent electron emission property results from the smooth, uniform, amorphous surface and high sp3 content of the a-D film.
Keywordshydrogen-free amorphous diamond film sp3 electron field emission work function
Unable to display preview. Download preview PDF.
- 10.Zhao Jianping, Wang Xi, Chen Zhiying et al., Preparation of amorphous diamond films and study on their properties,Chinese J. Functional Mat. Devices (in Chinese), 1997, 3(1): 67.Google Scholar