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Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode

  • Hua Wang
  • Jun Yu
  • Xiaomin Dong
  • Wenli Zhou
  • Yunbo Wang
  • Yuankai Zheng
  • Jianhong Zhao
Article

Abstract

A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop withP t=15 μC/cm2 andE c=48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12%. The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7×10−8 A/cm2 at a voltage of +4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic “1” and logic “0” at a read voltage of +2V, and the stored logical value (“1” or “0”) could be read out in 30 min.

Keywords

ferroeletric films memory diode Pb(Zr0.52Ti0.48)O3 Bi4Ti3O12 

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Copyright information

© Science in China Press 2001

Authors and Affiliations

  • Hua Wang
    • 1
    • 2
  • Jun Yu
    • 1
  • Xiaomin Dong
    • 1
  • Wenli Zhou
    • 1
  • Yunbo Wang
    • 1
  • Yuankai Zheng
    • 2
  • Jianhong Zhao
    • 1
  1. 1.Department of Electronic Science & TechnologyHuazhong University of Science & TechnologyWuhanChina
  2. 2.Department of Electron & InformationGuilin Institute of Electronic TechnologyGuilinChina

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