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Theory of susceptibility of a-Ge and a-Si

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Abstract

We propose a model of the thin films of a-Ge and a-Si with microvoids as frustrated spin glasses. Within this model the various qualitative aspects of the experimental results can be reasonably explained.

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  1. Department of Physics, Indian Institute of Technology, 208 016, Kanpur, India

    A Mookerjee & S C Agarwal

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  1. A Mookerjee
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  2. S C Agarwal
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Mookerjee, A., Agarwal, S.C. Theory of susceptibility of a-Ge and a-Si. Bull. Mater. Sci. 2, 353–356 (1980). https://doi.org/10.1007/BF02908580

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  • DOI: https://doi.org/10.1007/BF02908580

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