Chinese Science Bulletin

, Volume 50, Issue 4, pp 295–298 | Cite as

Thermal radiation characteristics of plane-parallel SiC wafer

  • Maohua Han
  • Xingang Liang
  • Yong Huang


The spectral and directional absorptivity of plane-parallel SiC wafer is investigated in the IR region. The result demonstrates that interference takes place for thermal radiation emitted by plane-parallel SiC layers of the thickness from several tens to 100 microns. Owing to particular optical property of SiC, the spectral absorptivity of 10-micron radiant wave is 0.98, close to 1, the absorptivity of black body. Nevertheless, the absorptivity approaches 0 in the range from 10.5 to 12.4 microns wavelength. Our calculation also shows that total hemispherical emissivity relates to wafer’s temperature. It is between 300 and 500K where higher total hemispherical emissivity exists.


SiC thin film thermal radiation optical property interference 


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Copyright information

© Science in China Press 2005

Authors and Affiliations

  1. 1.School of AerospaceTsinghua UniversityBeijingChina

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