Giant tunneling magnetoresistance in ferromagnet/insulator (semiconductor) coupling double-tunneljunction subjected to electric field
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Based on the two-band model, a transfer-matrix treatment of the tunnel conductance and magnetoresistance is presented for tunneling through ferromagnet/insulator (semiconductor) double-junction subjected to dc bias. There exist the spin polarized resonant tunneling and the giant tunnel magnetoresistance. The highest value of the magnetoresistance in double-junction can reach 90%. It is expected that these results can cause the interest in experimental efforts in designing spin polarized resonant tunneling devices. Our theories can also be extended to the single-junction and the superlattice easily. For the single-junction, our results are qualitatively in agreement with the experimental measurements.
Keywordstunneling coupling double-tunnel-junction
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- 5.Miyazaki, T., Tezuka, N., Giant magnetic tunneling effect in Fe/Al2O3/Fe junction,J. Magn. Magn. Mater., 1995, 139: L231.Google Scholar
- 9.Julliere, M., Tunneling between ferromagnetic films,Phys. Lett., 1975, 54A: 225.Google Scholar
- 12.Duke, C. B.,Tunneling in Solids, New York: Academic Press, 1969.Google Scholar
- 13.Burstein, E., Lundquist, S.,Tunneling Phenomena in Solids, New York: Plenum, 1969.Google Scholar