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Science in China Series A: Mathematics

, Volume 41, Issue 2, pp 177–182 | Cite as

Giant tunneling magnetoresistance in ferromagnet/insulator (semiconductor) coupling double-tunneljunction subjected to electric field

  • Xiangdong Zhang
  • Bozang Li
  • Gang Sun
  • Fucho Pu
Article
  • 36 Downloads

Abstract

Based on the two-band model, a transfer-matrix treatment of the tunnel conductance and magnetoresistance is presented for tunneling through ferromagnet/insulator (semiconductor) double-junction subjected to dc bias. There exist the spin polarized resonant tunneling and the giant tunnel magnetoresistance. The highest value of the magnetoresistance in double-junction can reach 90%. It is expected that these results can cause the interest in experimental efforts in designing spin polarized resonant tunneling devices. Our theories can also be extended to the single-junction and the superlattice easily. For the single-junction, our results are qualitatively in agreement with the experimental measurements.

Keywords

tunneling coupling double-tunnel-junction 

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Copyright information

© Science in China Press 1998

Authors and Affiliations

  • Xiangdong Zhang
    • 1
  • Bozang Li
    • 1
  • Gang Sun
    • 1
  • Fucho Pu
    • 1
  1. 1.Institute of Physics & Center for Condensed Matter PhysicsChinese Academy of SciencesBeijingChina

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