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Chinese Science Bulletin

, Volume 44, Issue 3, pp 210–214 | Cite as

Preparation and optical absorption of InAs nanocrystal-embedded thin films

  • Jianzhong Shi
  • Kaigui Zhu
  • Weiguo Yao
  • Juhui Jia
  • Zhixiang Cheng
  • Lide Zhang
Notes
  • 13 Downloads

Abstract

InAs-SiO2 nanocrystal-embedded films were prepared by using radio-frequency cosputtering. The growth behavior of InAs in the composite film has been studied by a transmission electron microscope. It has been found that with the increasing substrate temperature, InAs in the matrix undergoes transitions from an initial dispersed phase to a fractal structure of the lnAs phase, then to nucleation, and finally to grain growth. Large blueshift of the optical absorption edges of the films was observed from the optical absorption spectra. The relationship between the blueshift of optical absorption edge and the average size of the nanocrystals has been explained by the effective-mass approximation.

Keywords

nanocrystal-embedded thin films radio-frequency cosputtering optical absorption quantum confinement 

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Copyright information

© Science in China Press 1999

Authors and Affiliations

  • Jianzhong Shi
    • 1
  • Kaigui Zhu
    • 1
  • Weiguo Yao
    • 2
  • Juhui Jia
    • 1
  • Zhixiang Cheng
    • 1
  • Lide Zhang
    • 1
  1. 1.Institute of Solid State of PhysicsChinese Academy of SciencesHefeiChina
  2. 2.Dapartment of PhysicsSuzhou UniversitySuzhouChina

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