Advertisement

Chinese Science Bulletin

, Volume 43, Issue 2, pp 121–124 | Cite as

Analysis on electrical transport characteristic of 8-hydroquinoline aluminum film

  • Ligong Zhang
  • Dapeng Jiang
  • Xinguang Ren
  • Xueyan Liu
  • Yajun Li
  • Ande Lu
  • Jinshan Yuan
Bulletin
  • 12 Downloads

Abstract

The current-voltage and capacitance-voltage characteristic of the organic single-layered electroluminescent diode utilizing 8-hydroquinoline aluminum as active layer have been measured under bias ranging from −5 V to 28 V in this work. A simple model for charge transport process of 8-hydroquinoline aluminum layer is proposed to illuminate the conductivity characteristic of the diode.

Keywords

8-hydroquinoline aluminum current-voltage characteristic capacitance-voltage characteristic 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Tang, C. W., Vanslyke, S. A., Organic electroluminescent diodes,Appl. Phys. Lett., 1987, 51(12): 913.CrossRefGoogle Scholar
  2. 2.
    Uchida, M., Ohmori, Y.. Color-variable light-emitting diode utilizing conducting polymer containing fluorescent dye,Jpn. J. Appl. Phys. 1993, 32: L921.CrossRefGoogle Scholar
  3. 3.
    Jordain, R. H., Dodabalapar, A., Strukelj, M.et al., White organic electroluminescence devices,Appl. Phys. Lett., 1996, 68(9): 1192.CrossRefGoogle Scholar
  4. 4.
    Hosokawa, C., Higashi, H., Nakamura, H.et al., Highly efficient blue electroluminescence from a distyrylarylene emitting layer with a new dopant,Appl. Phys. Lett., 1995, 67(26): 3853.CrossRefGoogle Scholar
  5. 5.
    Wu, C. C., Chun, J. K., Bwrrows, P. E.et al., Poly(p-phenylene vinylene)/tris(8-hydroxy)quinoline aluminum heterostructure light emitting diode,Appl. Phys. Ltt., 1995, 66(6): 653.CrossRefGoogle Scholar
  6. 6.
    Peng, J. B., Hua, Y. L., Xu, S. Y.et al., Study on influence of thickness of luminescent layer on OEL,Chinese J. Luminescence, 1994, 1:9.Google Scholar
  7. 7.
    Kepler, R. G., Beeson, P. M., Jacobs, S. J.et al., Electron and hole mobility in tris (8-hydroxyquinolinolato-N1, 08),Aluminum, Appl. Phys. Lett., 1995, 66(26): 3618.CrossRefGoogle Scholar
  8. 8.
    Hamada, Y., Sano, T., Fujita, M.et al., Organic EL devices with 8-hydroxyquinoline derivative-metal complexes as an emitter,Jpn. J. Appl. Phys., 1993, 32: 514.CrossRefGoogle Scholar
  9. 9.
    Weijtens, C. H. L., VanLoon, P. A. C., Influence of annealing on the optical properties of indium oxide,Thin Solid Films, 1991, 196: 1.CrossRefGoogle Scholar
  10. 10.
    Ye, L. X.,Semiconductor Physics, Chapter 8, Beijing: High Education Publishing House, 1996.Google Scholar
  11. 11.
    Sharma, B. L.,Metal-semiconductor Schottky Brrier Junctions and Their Application, New York: Plenum, 1984, 42.Google Scholar

Copyright information

© Science in China Press 1998

Authors and Affiliations

  • Ligong Zhang
    • 1
  • Dapeng Jiang
    • 1
  • Xinguang Ren
    • 1
  • Xueyan Liu
    • 1
  • Yajun Li
    • 1
  • Ande Lu
    • 1
  • Jinshan Yuan
    • 1
  1. 1.Changchun Institute of PhysicsChinese Academy of SciencesChangchunChina

Personalised recommendations