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Enhancement of the photoluminescence intensity of porous silicon by absorbed organic molecule

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Chinese Science Bulletin

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Reference

  1. Lauerhaas, J. M., Sailor, M. J., Chemical modification of the photoluminescence quenching of porous silicon,Science, 1993, 261: 1567.

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Authors and Affiliations

  1. Institute of Photographic Chemistry, Chinese Academy of Sciences, 100101, Beijing, China

    Feng Yin, Xueping Li, Xurui Xiao, Baowen Zhang, Yi Cao & Jingron Chen

  2. National Laboratory for Superlattices and Microstructurrs, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China

    Guohua Li, Hexiang Han & Zaopin Wang

Authors
  1. Feng Yin
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  2. Xueping Li
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  3. Xurui Xiao
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  4. Baowen Zhang
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  5. Yi Cao
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  6. Jingron Chen
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  7. Guohua Li
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  8. Hexiang Han
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  9. Zaopin Wang
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Cite this article

Yin, F., Li, X., Xiao, X. et al. Enhancement of the photoluminescence intensity of porous silicon by absorbed organic molecule. Chin. Sci. Bull. 43, 616 (1998). https://doi.org/10.1007/BF02883654

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  • DOI: https://doi.org/10.1007/BF02883654

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