Preparation of InSb nanocrystals embedded in SiO2 thin films
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InSb nanocrystals embedded in SiO2 thin films were prepared by rf magnetron cosputtering technique. THe observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly in SiO2 matrices. InSb nanocrystals with different sizes can be obtained by changing the annealing condition. The average size of InSb nanocrystals depended on annealing temperature and time, but not on the t1/3 rules. X-ray photoelectron spectroscopy and X-ray diffraction were also applied to the analyses of the composite thin films.
KeywordsInSb nanocrystals radio-frequency sputtering quantum confinement
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