Free electron laser induced two-photon photoconductivity in Hg1-xCdxTe
The Beijing free electron laser ( BFEL) has been employed for the first time to study the nonlinear photoconductivity characteristics of the typical infrared photoelectronic material Hg1-xCdxTe Taking advantage of the high photon flux density of BFEL, we have investigated the photoconductivity characteristics in Hg1-xCdx Te induced by two-photon absorption by means of the photoconductivity technique, observed the photoconductivity signals saturation, and studied the two-photon photoconductivity characteristics on different bias voltages across the sample.
Keywordsfree electron laser two-photon absorption photoconductivity
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