Wuhan University Journal of Natural Sciences

, Volume 9, Issue 6, pp 918–920 | Cite as

Modeling quantum transport in nanoscale vertical SOI nMOSFET

  • Tong Jian-nong
  • Zou Xue-chang
  • Shen Xu-bang


The electron transports in micro-architecture semiconductor are simulated using vertical SOI nMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and drain voltage. An interesting phenomenon similar to collimation effect in mesoscopic system is observed. This may suggest the quite intriguing possibility that scattering may open new channel in sufficiently narrow devices.

Key words

semiconductor MOSFET transport mesoscopic system 

CLC number

TN 303 TN 304 


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Copyright information

© Springer 2004

Authors and Affiliations

  1. 1.Institute of Pattern Recognition and Artifical Intelligence StateHuazhong University of Science and TechnologyWuhan, HubeiChina
  2. 2.Department of Electronic Science and TechnologyHuazhong University of Science and TechnologyWuhan, HubeiChina

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