Distribution of surface states based on Hill and Coleman conductance technique
Hill-Coleman’s single frequency conductance technique for the determination of surface state density has been extended upto 2 kHz. A.c. conductance (G m) and capacitance (C m)versus gate bias (V G) curves were obtained at various signal frequencies. Shift of the observed peaks in theG m versus VG curves for different signal frequencies was utilized for the determination of surface state density at different surface potentials (φ s). Determination of surface state density for differentφ s values was also done by Nicollian-Goetzberger method and the results compared. Results obtained by Hill-Coleman technique compare reasonably well with those obtained by the other method.
KeywordsMetal-oxide-semiconductor structure a.c. conductance interface state density surface state distribution
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