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Pramana

, Volume 8, Issue 4, pp 335–347 | Cite as

A. C. behaviour and dielectric relaxation in indium oxide films

  • A Goswami
  • Amit P Goswami
Solids

Abstract

Vacuum deposited blackish indium oxide films (In-O) as well as the oxidised films (In2O3) were studied for their a.c. behaviour at different temperatures and at various film thicknesses in the audio frequency region. ε of In-O films was thickness dependent and also showed dielectric relaxation at lower frequencies due to the dipolar orientation arising from their non-stoichiometric nature. However at liquid nitrogen temperature region ε was thickness independent similar to the oxidised films which neither showed any relaxation effect nor any thickness dependent ε. The results have been discussed from the classical theory of dielectric polarisation.

Keywords

Dielectric relaxation a.c. properties indium oxide films 

List of symbols

α

Absorption coefficient

tanδ

Loss factor

ε

Dielectric constant

ε″

ε tanδ

π

Constant

ρ

Resistivity

τ

Relaxation time

ω

Angular frequency

a

Lattice constant

d

Film thickness

f

Frequency

k

Absorption index: Boltzmann constant

n

Refractive index

r

Lead resistance

C

Capacitance

Q

Dipole thermal activation energy

R

Film resistance

T

Absolute temperature

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Copyright information

© the Indian Academy of Sciences 1975

Authors and Affiliations

  • A Goswami
    • 1
  • Amit P Goswami
    • 1
    • 2
  1. 1.National Chemical LaboratoryPune
  2. 2.R.C. DivisionElectronics Corporation of India LimitedHyderabad

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