A. C. behaviour and dielectric relaxation in indium oxide films
Vacuum deposited blackish indium oxide films (In-O) as well as the oxidised films (In2O3) were studied for their a.c. behaviour at different temperatures and at various film thicknesses in the audio frequency region. ε of In-O films was thickness dependent and also showed dielectric relaxation at lower frequencies due to the dipolar orientation arising from their non-stoichiometric nature. However at liquid nitrogen temperature region ε was thickness independent similar to the oxidised films which neither showed any relaxation effect nor any thickness dependent ε. The results have been discussed from the classical theory of dielectric polarisation.
KeywordsDielectric relaxation a.c. properties indium oxide films
List of symbols
Absorption index: Boltzmann constant
Dipole thermal activation energy
Unable to display preview. Download preview PDF.
- Debye P 1912Phys. Z. 13 97Google Scholar
- Gaffee D I 1962Proc. IEEE B109 336Google Scholar
- Goswami A 1965Indian J. Chem. 3 385Google Scholar
- Goswami A and Goswami Amit P 1974a Thin Solid Films 20 S3Google Scholar
- Goswami Amit P and Goswami A 1974 bIndian J. Pure Appl. Phys. 12 26Google Scholar
- Goswami A and Goswami Amit P 1974c Int. Cryst. Conf. Melbourne (Australian Academy of Sciences II—G4, p. 194)Google Scholar
- Goswami A and Goswami Amit P 1975 aIndian J. Phys. 49 380Google Scholar
- Harrop P J and Campbell D S 1970Handbook of Thin Film Technology ed. Maissel L I and Glang R (McGraw-Hill Book Company Inc. New York)Google Scholar
- Mellor J W 1934A Comprehensive Treatise on Inorganic and Physical Chemistry Vol. 3 (Longmans and Green Co., London).Google Scholar