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Journal of Electronic Materials

, Volume 9, Issue 5, pp 905–912 | Cite as

Laser annealing of hydrogenated amorphous silicon

  • J. I. Pankove
  • C. P. Wu
  • C. W. Magee
  • J. T. McGinn
Article

Abstract

Pulsed laser annealing of hydrogenated amorphous silicon, glow-discharge-deposited on single crystal silicon, shows partial crystallization without significant loss of hydrogen. After laser annealing up to 60 MW/cm2, the photoluminescence spectrum exhibits only a very slight shift to lower energy. This contrasts with thermally induced dehydrogenation which causes a large spectral shift. Also thermally induced crystallization occurs above 700‡C where dehydrogenation is complete.

Keywords

Dehydrogenation Hydrogen Concentration Amorphous Silicon Single Crystal Silicon Dangling Bond 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© The Minerals, Metals & Materials Society 1980

Authors and Affiliations

  • J. I. Pankove
    • 1
  • C. P. Wu
    • 1
  • C. W. Magee
    • 1
  • J. T. McGinn
    • 1
  1. 1.RCA LaboratoriesPrinceton

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