Journal of Electronic Materials

, Volume 9, Issue 5, pp 905–912 | Cite as

Laser annealing of hydrogenated amorphous silicon

  • J. I. Pankove
  • C. P. Wu
  • C. W. Magee
  • J. T. McGinn


Pulsed laser annealing of hydrogenated amorphous silicon, glow-discharge-deposited on single crystal silicon, shows partial crystallization without significant loss of hydrogen. After laser annealing up to 60 MW/cm2, the photoluminescence spectrum exhibits only a very slight shift to lower energy. This contrasts with thermally induced dehydrogenation which causes a large spectral shift. Also thermally induced crystallization occurs above 700‡C where dehydrogenation is complete.


Dehydrogenation Hydrogen Concentration Amorphous Silicon Single Crystal Silicon Dangling Bond 
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Copyright information

© The Minerals, Metals & Materials Society 1980

Authors and Affiliations

  • J. I. Pankove
    • 1
  • C. P. Wu
    • 1
  • C. W. Magee
    • 1
  • J. T. McGinn
    • 1
  1. 1.RCA LaboratoriesPrinceton

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