Bulletin of Materials Science

, Volume 5, Issue 1, pp 71–77 | Cite as

Stress relaxation in ferroelectric materials

  • V C S Prasad


Stress relaxation takes place in BaTiO3 type ferroelectric materials due to the motion of non 180° domain boundaries, which are the twin boundaries. The nature of stress relaxation taking place due to plastic deformation in crystalline solids and that due to twin boundaries in ferro electric materials is discussed. The usefulness of the stress relaxation data for the study of domain wall motions in this type of ferroelectrics is pointed out.


Stress relaxation ferroelectric domains thermally activated deformation ageing 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. Bogdnov S V 1962Sov. Phys. Cryst. 7 611Google Scholar
  2. Cottrell A H 1963Dislocations and plastic flow in crystals (Oxford): Clarendon Press p 53Google Scholar
  3. Esaklul K A, Kersberich W W and Koepke B G 1980J. Am. Ceram. Soc. 63 25CrossRefGoogle Scholar
  4. Guiu F and Pratt P L 1964Phys. Status Solidi 6 111CrossRefGoogle Scholar
  5. Jaffe G, Cook W R and Jaffe H 1971 Piezoelectric ceramics (London, New York; Academic Press), 135Google Scholar
  6. Johnston W G and Gilman J J 1959J. Appl. Phys. 30 129CrossRefGoogle Scholar
  7. Lee D and Hart E W 1971Mater. Trans 2 1245Google Scholar
  8. Llyod D J and Embury J D 1971Phys. Status Solidi 43 393CrossRefGoogle Scholar
  9. MacEwen S R, Kupcis O A and Ramaswami B 1969Scr. Metall. 3 441CrossRefGoogle Scholar
  10. McQuarrie M C and Bussem W R 1955Am. Ceram. Soc. Bull. 34 402Google Scholar
  11. Orowon E 1940Proc. Phys. Soc. 52 8CrossRefGoogle Scholar
  12. Prasad V C S and Subbarao E C 1977Ferroelectrics 15 143Google Scholar
  13. Prasad V C S and Subbarao E C 1973Appl. Phys. Lett. 22 424CrossRefGoogle Scholar
  14. Prasad V C S 1973Stress induced motion of twin boundaries in BaTiO 3 and KNbO 3 single crystals Ph.D Thesis Indian Institute of Technology, KanpurGoogle Scholar
  15. Prasad V C S and Subbarao E C 1972Mater. Sci. Eng. 10 297CrossRefGoogle Scholar
  16. Reed-Hill R E and Dahlberg E P 1966Trans. AIME 236 679Google Scholar
  17. Rhodes R C 1951Acta Crystallogr.4 105CrossRefGoogle Scholar
  18. Subbarao E C, McQuarrie M C and Bussem W R 1957J. Appl. Phys. 28 1194CrossRefGoogle Scholar
  19. Syrkin L N and El’gard A M 1965Sov. Phys. Solid State 7 967Google Scholar
  20. Wood E A 1951Acta Crystallogr. 4 353CrossRefGoogle Scholar

Copyright information

© the Indian Academy of Sciences 1983

Authors and Affiliations

  • V C S Prasad
    • 1
  1. 1.Materials Development LaboratoryBharat Electronics LimitedBangaloreIndia

Personalised recommendations