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Journal of Electronic Materials

, Volume 22, Issue 11, pp 1369–1372 | Cite as

Fast growth of Cd1−xZnxTe single crystals by physical vapor transport

  • H. Wiedemeier
  • G. H. Wu
Letters

Abstract

Good quality single crystals of Cd1−xZnxTe (x=0.04, 0.08, and 0.115) were obtained by the very fast vapor growth technique developed in this laboratory. The abundance of lamellar twins seems to be less than that in CdTe grown under the same conditions. Chemical etching results indicate a similar quality of the vapor grown crystals to those obtained from melt growth. The overall compositions of the crystals are uniform and approach those of the initial source material with increasing amount transported.

Key words

Cd1−xZnxTe single crystal very fast vapor growth 

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Copyright information

© The Minerals, Metals & Materials Society 1993

Authors and Affiliations

  • H. Wiedemeier
    • 1
  • G. H. Wu
    • 1
  1. 1.Department of ChemistryRensselaer Polytechnic InstituteTroy

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