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Fast growth of Cd1−xZnxTe single crystals by physical vapor transport

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Abstract

Good quality single crystals of Cd1−xZnxTe (x=0.04, 0.08, and 0.115) were obtained by the very fast vapor growth technique developed in this laboratory. The abundance of lamellar twins seems to be less than that in CdTe grown under the same conditions. Chemical etching results indicate a similar quality of the vapor grown crystals to those obtained from melt growth. The overall compositions of the crystals are uniform and approach those of the initial source material with increasing amount transported.

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Authors and Affiliations

  1. Department of Chemistry, Rensselaer Polytechnic Institute, 12180, Troy, NY

    H. Wiedemeier & G. H. Wu

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  1. H. Wiedemeier
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  2. G. H. Wu
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Wiedemeier, H., Wu, G.H. Fast growth of Cd1−xZnxTe single crystals by physical vapor transport. J. Electron. Mater. 22, 1369–1372 (1993). https://doi.org/10.1007/BF02817702

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  • DOI: https://doi.org/10.1007/BF02817702

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