Molecular beam epitaxial growth of Si1−xGex/Si pseudomorphic layers using disilane and germanium
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Molecular beam epitaxial growth of pseudomorphic Si1−xGex/Si layers using disilane (Si2H6) and elemental germanium has been studied for the first time. It is found that at a fixed flow rate of Si2H6, the germanium content in the Si1−xGex alloys is a function of the germanium cell temperature. Heterostructures and multi-quantum wells with good surface morphology, excellent crystalline quality, and abrupt interfaces are demonstrated, indicating little or no sourcerelated transient effects.
Key wordsDisilane Ge MBE source SiGe/Si
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