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Journal of Electronic Materials

, Volume 22, Issue 7, pp 793–795 | Cite as

Molecular beam epitaxial growth of Si1−xGex/Si pseudomorphic layers using disilane and germanium

  • S. H. Li
  • P. K. Bhattacharya
  • R. Malik
  • E. Gulari
Letter

Abstract

Molecular beam epitaxial growth of pseudomorphic Si1−xGex/Si layers using disilane (Si2H6) and elemental germanium has been studied for the first time. It is found that at a fixed flow rate of Si2H6, the germanium content in the Si1−xGex alloys is a function of the germanium cell temperature. Heterostructures and multi-quantum wells with good surface morphology, excellent crystalline quality, and abrupt interfaces are demonstrated, indicating little or no sourcerelated transient effects.

Key words

Disilane Ge MBE source SiGe/Si 

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Copyright information

© The Minerals, Metals & Materials Society 1993

Authors and Affiliations

  • S. H. Li
    • 1
  • P. K. Bhattacharya
    • 1
  • R. Malik
    • 2
  • E. Gulari
    • 2
  1. 1.Solid State Electronics Laboratory, Department of Electrical Engineering and Computer ScienceUniversity of MichiganAnn Arbor
  2. 2.Department of Chemical EngineeringUniversity of MichiganAnn Arbor

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