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Molecular beam epitaxial growth of Si1−xGex/Si pseudomorphic layers using disilane and germanium

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Abstract

Molecular beam epitaxial growth of pseudomorphic Si1−xGex/Si layers using disilane (Si2H6) and elemental germanium has been studied for the first time. It is found that at a fixed flow rate of Si2H6, the germanium content in the Si1−xGex alloys is a function of the germanium cell temperature. Heterostructures and multi-quantum wells with good surface morphology, excellent crystalline quality, and abrupt interfaces are demonstrated, indicating little or no sourcerelated transient effects.

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Authors and Affiliations

  1. Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, 48109-2122, Ann Arbor, MI

    S. H. Li & P. K. Bhattacharya

  2. Department of Chemical Engineering, University of Michigan, 48109-2136, Ann Arbor, MI

    R. Malik & E. Gulari

Authors
  1. S. H. Li
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  2. P. K. Bhattacharya
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  3. R. Malik
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  4. E. Gulari
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Li, S.H., Bhattacharya, P.K., Malik, R. et al. Molecular beam epitaxial growth of Si1−xGex/Si pseudomorphic layers using disilane and germanium. J. Electron. Mater. 22, 793–795 (1993). https://doi.org/10.1007/BF02817356

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  • DOI: https://doi.org/10.1007/BF02817356

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